Cold-walled UHV/CVD batch reactor for the growth of Si1_x/Gex layers

Erik Vilain Thomsen; Carsten Christensen; C.R. Andersen; Erik Vesterlund Pedersen; Paul Nicholas Egginton; Ole Hansen; Jon Wulff Petersen

doi:10.1016/S0040-6090(96)09225-5

Cold-walled UHV/CVD batch reactor for the growth of Si1_x/Gex layers

Erik Vilain Thomsen
, Carsten Christensen
, C.R. Andersen
, Erik Vesterlund Pedersen
, Paul Nicholas Egginton
, Ole Hansen
, Jon Wulff Petersen

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

A novel cold-walled, lamp-heated, ultrahigh vacuum chemical vapor deposition (UHV/CVD) batch system for the growth of SiGe layers is presented. This system combines the batch capability of the standard UHV/CVD furnace with the temperature processing available in rapid thermal processing (Rm) equipment. The first results are very encouraging: germanium contents up to 30% and boron doping levels up to 5 x 10(18) cm(-3) have been obtained. The uniformity of the film thickness is around 10% both across a single wafer and through the boat load, Different surface passivation schemes were investigated using excess carrier lifetime measurements. These measurements show that diluted HF provides much better surface passivation than buffered HF.

Original language	English
Journal	Thin Solid Films
Volume	294
Issue number	1-2
Pages (from-to)	72-75
ISSN	0040-6090
DOIs	https://doi.org/10.1016/S0040-6090(96)09225-5
Publication status	Published - 1997

Keywords

Alloys
Silicon
Germanium
Chemical vapour deposition
Surface passivation

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10.1016/S0040-6090(96)09225-5

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@article{39260e95c20840a5be33fd732c6d9a8b,

title = "Cold-walled UHV/CVD batch reactor for the growth of Si1\_x/Gex layers",

abstract = "A novel cold-walled, lamp-heated, ultrahigh vacuum chemical vapor deposition (UHV/CVD) batch system for the growth of SiGe layers is presented. This system combines the batch capability of the standard UHV/CVD furnace with the temperature processing available in rapid thermal processing (Rm) equipment. The first results are very encouraging: germanium contents up to 30\% and boron doping levels up to 5 x 10(18) cm(-3) have been obtained. The uniformity of the film thickness is around 10\% both across a single wafer and through the boat load, Different surface passivation schemes were investigated using excess carrier lifetime measurements. These measurements show that diluted HF provides much better surface passivation than buffered HF. ",

keywords = "Alloys, Silicon, Germanium, Chemical vapour deposition, Surface passivation",

author = "Thomsen, \{Erik Vilain\} and Carsten Christensen and C.R. Andersen and Pedersen, \{Erik Vesterlund\} and Egginton, \{Paul Nicholas\} and Ole Hansen and Petersen, \{Jon Wulff\}",

year = "1997",

doi = "10.1016/S0040-6090(96)09225-5",

language = "English",

volume = "294",

pages = "72--75",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Cold-walled UHV/CVD batch reactor for the growth of Si1_x/Gex layers

AU - Thomsen, Erik Vilain

AU - Christensen, Carsten

AU - Andersen, C.R.

AU - Pedersen, Erik Vesterlund

AU - Egginton, Paul Nicholas

AU - Hansen, Ole

AU - Petersen, Jon Wulff

PY - 1997

Y1 - 1997

N2 - A novel cold-walled, lamp-heated, ultrahigh vacuum chemical vapor deposition (UHV/CVD) batch system for the growth of SiGe layers is presented. This system combines the batch capability of the standard UHV/CVD furnace with the temperature processing available in rapid thermal processing (Rm) equipment. The first results are very encouraging: germanium contents up to 30% and boron doping levels up to 5 x 10(18) cm(-3) have been obtained. The uniformity of the film thickness is around 10% both across a single wafer and through the boat load, Different surface passivation schemes were investigated using excess carrier lifetime measurements. These measurements show that diluted HF provides much better surface passivation than buffered HF.

AB - A novel cold-walled, lamp-heated, ultrahigh vacuum chemical vapor deposition (UHV/CVD) batch system for the growth of SiGe layers is presented. This system combines the batch capability of the standard UHV/CVD furnace with the temperature processing available in rapid thermal processing (Rm) equipment. The first results are very encouraging: germanium contents up to 30% and boron doping levels up to 5 x 10(18) cm(-3) have been obtained. The uniformity of the film thickness is around 10% both across a single wafer and through the boat load, Different surface passivation schemes were investigated using excess carrier lifetime measurements. These measurements show that diluted HF provides much better surface passivation than buffered HF.

KW - Alloys

KW - Silicon

KW - Germanium

KW - Chemical vapour deposition

KW - Surface passivation

U2 - 10.1016/S0040-6090(96)09225-5

DO - 10.1016/S0040-6090(96)09225-5

M3 - Journal article

SN - 0040-6090

VL - 294

SP - 72

EP - 75

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Cold-walled UHV/CVD batch reactor for the growth of Si1_x/Gex layers

Abstract

Keywords

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