Cold-walled UHV/CVD batch reactor for the growth of Si1_x/Gex layers

Erik Vilain Thomsen, Carsten Christensen, C.R. Andersen, Erik Vesterlund Pedersen, Paul Nicholas Egginton, Ole Hansen, Jon Wulff Petersen

    Research output: Contribution to journalJournal articleResearchpeer-review


    A novel cold-walled, lamp-heated, ultrahigh vacuum chemical vapor deposition (UHV/CVD) batch system for the growth of SiGe layers is presented. This system combines the batch capability of the standard UHV/CVD furnace with the temperature processing available in rapid thermal processing (Rm) equipment. The first results are very encouraging: germanium contents up to 30% and boron doping levels up to 5 x 10(18) cm(-3) have been obtained. The uniformity of the film thickness is around 10% both across a single wafer and through the boat load, Different surface passivation schemes were investigated using excess carrier lifetime measurements. These measurements show that diluted HF provides much better surface passivation than buffered HF.
    Original languageEnglish
    JournalThin Solid Films
    Issue number1-2
    Pages (from-to)72-75
    Publication statusPublished - 1997


    • Alloys
    • Silicon
    • Germanium
    • Chemical vapour deposition
    • Surface passivation


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