Cold-walled UHV/CVD batch reactor for the growth of Si1_x/Gex layers

Erik Vilain Thomsen, Carsten Christensen, C.R. Andersen, Erik Vesterlund Pedersen, Paul Nicholas Egginton, Ole Hansen, Jon Wulff Petersen

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    A novel cold-walled, lamp-heated, ultrahigh vacuum chemical vapor deposition (UHV/CVD) batch system for the growth of SiGe layers is presented. This system combines the batch capability of the standard UHV/CVD furnace with the temperature processing available in rapid thermal processing (Rm) equipment. The first results are very encouraging: germanium contents up to 30% and boron doping levels up to 5 x 10(18) cm(-3) have been obtained. The uniformity of the film thickness is around 10% both across a single wafer and through the boat load, Different surface passivation schemes were investigated using excess carrier lifetime measurements. These measurements show that diluted HF provides much better surface passivation than buffered HF.
    Original languageEnglish
    JournalThin Solid Films
    Volume294
    Issue number1-2
    Pages (from-to)72-75
    ISSN0040-6090
    DOIs
    Publication statusPublished - 1997

    Keywords

    • Alloys
    • Silicon
    • Germanium
    • Chemical vapour deposition
    • Surface passivation

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