Abstract
Biexciton formation and phonon-assisted relaxation in monolayer
CdSe/ZnSe structures is studied by photoluminescence (PL) and
time-integrated four-wave mixing (TIFWM). The biexciton binding
energy is enhanced by a factor of 5 compared to the bulk value.
The exciton dynamics is strongly modified due to the lateral
confinement and the carrier relaxation into CdSe islands.
| Original language | English |
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| Title of host publication | Proceedings of the 24th International Conference on The Physics of Semiconductors |
| Place of Publication | Singapore |
| Publisher | World Scientific |
| Publication date | 1999 |
| Publication status | Published - 1999 |
| Event | 24th International Conference on The Physics of Semiconductors - Jerusalem, Israel Duration: 2 Aug 1998 → 7 Aug 1998 Conference number: 24 http://physics.technion.ac.il/~icps24/ |
Conference
| Conference | 24th International Conference on The Physics of Semiconductors |
|---|---|
| Number | 24 |
| Country/Territory | Israel |
| City | Jerusalem |
| Period | 02/08/1998 → 07/08/1998 |
| Internet address |