Coherent Interaction and Relaxation Processes of
                Zero-Dimensional Excitons in CdSe/Zn1-xCdxSe Quantum Structures

F. Gindele; Ulrike Woggon; Wolfgang Langbein; Jørn Märcher Hvam; K. Leonardi; D. Hommel; David Gershoni

Coherent Interaction and Relaxation Processes of Zero-Dimensional Excitons in CdSe/Zn1-xCdxSe Quantum Structures

F. Gindele, Ulrike Woggon, Wolfgang Langbein, Jørn Märcher Hvam, K. Leonardi, D. Hommel, David Gershoni

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

Biexciton formation and phonon-assisted relaxation in monolayer CdSe/ZnSe structures is studied by photoluminescence (PL) and time-integrated four-wave mixing (TIFWM). The biexciton binding energy is enhanced by a factor of 5 compared to the bulk value. The exciton dynamics is strongly modified due to the lateral confinement and the carrier relaxation into CdSe islands.

Original language	English
Title of host publication	Proceedings of the 24th International Conference on The Physics of Semiconductors
Place of Publication	Singapore
Publisher	World Scientific
Publication date	1999
Publication status	Published - 1999
Event	24th International Conference on The Physics of Semiconductors - Jerusalem, Israel Duration: 2 Aug 1998 → 7 Aug 1998 Conference number: 24 http://physics.technion.ac.il/~icps24/

Conference

Conference	24th International Conference on The Physics of Semiconductors
Number	24
Country/Territory	Israel
City	Jerusalem
Period	02/08/1998 → 07/08/1998
Internet address	http://physics.technion.ac.il/~icps24/

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@inproceedings{13dce489a93b490595cbf9256c4b2223,

title = "Coherent Interaction and Relaxation Processes of Zero-Dimensional Excitons in CdSe/Zn1-xCdxSe Quantum Structures",

abstract = "Biexciton formation and phonon-assisted relaxation in monolayer CdSe/ZnSe structures is studied by photoluminescence (PL) and time-integrated four-wave mixing (TIFWM). The biexciton binding energy is enhanced by a factor of 5 compared to the bulk value. The exciton dynamics is strongly modified due to the lateral confinement and the carrier relaxation into CdSe islands.",

author = "F. Gindele and Ulrike Woggon and Wolfgang Langbein and Hvam, {J{\o}rn M{\"a}rcher} and K. Leonardi and D. Hommel and David Gershoni",

year = "1999",

language = "English",

booktitle = "Proceedings of the 24th International Conference on The Physics of Semiconductors",

publisher = "World Scientific",

address = "Singapore",

note = "24th International Conference on The Physics of Semiconductors, ICPS 24 ; Conference date: 02-08-1998 Through 07-08-1998",

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Gindele, F, Woggon, U, Langbein, W, Hvam, JM, Leonardi, K, Hommel, D & Gershoni, D 1999, Coherent Interaction and Relaxation Processes of Zero-Dimensional Excitons in CdSe/Zn1-xCdxSe Quantum Structures. in Proceedings of the 24th International Conference on The Physics of Semiconductors. World Scientific, Singapore, 24th International Conference on The Physics of Semiconductors, Jerusalem, Israel, 02/08/1998.

Coherent Interaction and Relaxation Processes of Zero-Dimensional Excitons in CdSe/Zn1-xCdxSe Quantum Structures. / Gindele, F.; Woggon, Ulrike; Langbein, Wolfgang et al.
Proceedings of the 24th International Conference on The Physics of Semiconductors. Singapore: World Scientific, 1999.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Coherent Interaction and Relaxation Processes of Zero-Dimensional Excitons in CdSe/Zn1-xCdxSe Quantum Structures

AU - Gindele, F.

AU - Woggon, Ulrike

AU - Langbein, Wolfgang

AU - Hvam, Jørn Märcher

AU - Leonardi, K.

AU - Hommel, D.

AU - Gershoni, David

N1 - Conference code: 24

PY - 1999

Y1 - 1999

N2 - Biexciton formation and phonon-assisted relaxation in monolayer CdSe/ZnSe structures is studied by photoluminescence (PL) and time-integrated four-wave mixing (TIFWM). The biexciton binding energy is enhanced by a factor of 5 compared to the bulk value. The exciton dynamics is strongly modified due to the lateral confinement and the carrier relaxation into CdSe islands.

AB - Biexciton formation and phonon-assisted relaxation in monolayer CdSe/ZnSe structures is studied by photoluminescence (PL) and time-integrated four-wave mixing (TIFWM). The biexciton binding energy is enhanced by a factor of 5 compared to the bulk value. The exciton dynamics is strongly modified due to the lateral confinement and the carrier relaxation into CdSe islands.

M3 - Article in proceedings

BT - Proceedings of the 24th International Conference on The Physics of Semiconductors

PB - World Scientific

CY - Singapore

T2 - 24th International Conference on The Physics of Semiconductors

Y2 - 2 August 1998 through 7 August 1998

ER -