Coherent excitonic nonlinearity versus inhomogeneous broadening in single quantum wells

Wolfgang Werner Langbein, Paola Borri, Jørn Märcher Hvam, Dan Birkedal

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    Abstract

    The coherent response of excitons in semiconductor nanostructures, as measured in four wave mixing (FWM) experiments, depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs-AlGaAs single quantum wells (SQW) of 4 nm to 25 nm well width. Two main mechanisms are found to be important. First, the excitation-induced dephasing FWM signal (EID), which leads to a strong dependence of the signal on the angle between the linear input polarizations. The presence of the EID in the mainly homogeneously broadened sample (25 nm) is shown by the beating between EID and two-photon coherence (TPC) at the exciton for negative delay and co-linear polarized excitation. It vanishes for cross-polarized excitation, thus excluding the importance of local-field effects
    Original languageEnglish
    Title of host publicationSummaries of papers presented at the International Quantum Electronics Conference
    PublisherIEEE
    Publication date1998
    Pages55-56
    ISBN (Print)1-55752-541-2
    DOIs
    Publication statusPublished - 1998
    Event1998 International Quantum Electronics Conference - San Francisco, CA, United States
    Duration: 3 May 19988 May 1998

    Conference

    Conference1998 International Quantum Electronics Conference
    CountryUnited States
    CitySan Francisco, CA
    Period03/05/199808/05/1998

    Bibliographical note

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    Cite this

    Langbein, W. W., Borri, P., Hvam, J. M., & Birkedal, D. (1998). Coherent excitonic nonlinearity versus inhomogeneous broadening in single quantum wells. In Summaries of papers presented at the International Quantum Electronics Conference (pp. 55-56). IEEE. https://doi.org/10.1109/IQEC.1998.680119