Coherent dynamics of exciton and biexciton resonances in InGaAs/GaAs single quantum wells

Paola Borri; Wolfgang Langbein; Jørn Märcher Hvam; F. Martelli; David Gershoni

Coherent dynamics of exciton and biexciton resonances in InGaAs/GaAs single quantum wells

Paola Borri
, Wolfgang Langbein
, Jørn Märcher Hvam
, F. Martelli
, David Gershoni (Editor)

Fondazione Ugo Bordoni
Technion-Israel Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

The coherent dynamics of both exciton and biexciton resonances have been investigated in In0.18Ga0.82As/GaAs single quantum wells with thicknesses ranging from 1 to 4 nm, using time-integrated and spectrally-resolved transient four-wave mixing. From the temperature dependence of the exciton dephasing time we obtain linewidth broadening coefficients for acoustic and optical phonons. Biexciton binding energies are extracted from the four-wave mixing response in the spectral domain, and are found to be between 1.5 and 2.6 meV. The temperature dempendence of the dephasing of the exciton-biexciton transition is deduced.

Original language	English
Title of host publication	Proceedings of the 24th International Conference on The Physics of Semiconductors
Place of Publication	Singapore
Publisher	World Scientific
Publication date	1999
Publication status	Published - 1999
Event	24th International Conference on The Physics of Semiconductors - Jerusalem, Israel Duration: 2 Aug 1998 → 7 Aug 1998 Conference number: 24 http://physics.technion.ac.il/~icps24/

Conference

Conference	24th International Conference on The Physics of Semiconductors
Number	24
Country/Territory	Israel
City	Jerusalem
Period	02/08/1998 → 07/08/1998
Internet address	http://physics.technion.ac.il/~icps24/

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@inproceedings{82ed31fa21e647acb4a1264d304dbfab,

title = "Coherent dynamics of exciton and biexciton resonances in InGaAs/GaAs single quantum wells",

abstract = "The coherent dynamics of both exciton and biexciton resonances have been investigated in In0.18Ga0.82As/GaAs single quantum wells with thicknesses ranging from 1 to 4 nm, using time-integrated and spectrally-resolved transient four-wave mixing. From the temperature dependence of the exciton dephasing time we obtain linewidth broadening coefficients for acoustic and optical phonons. Biexciton binding energies are extracted from the four-wave mixing response in the spectral domain, and are found to be between 1.5 and 2.6 meV. The temperature dempendence of the dephasing of the exciton-biexciton transition is deduced.",

author = "Paola Borri and Wolfgang Langbein and Hvam, \{J{\o}rn M{\"a}rcher\} and F. Martelli and David Gershoni",

year = "1999",

language = "English",

booktitle = "Proceedings of the 24th International Conference on The Physics of Semiconductors",

publisher = "World Scientific",

address = "Singapore",

note = "24th International Conference on The Physics of Semiconductors, ICPS 24 ; Conference date: 02-08-1998 Through 07-08-1998",

url = "http://physics.technion.ac.il/\textasciitilde{}icps24/",

}

Borri, P, Langbein, W, Hvam, JM, Martelli, F & Gershoni, D (ed.) 1999, Coherent dynamics of exciton and biexciton resonances in InGaAs/GaAs single quantum wells. in Proceedings of the 24th International Conference on The Physics of Semiconductors. World Scientific, Singapore, 24th International Conference on The Physics of Semiconductors, Jerusalem, Israel, 02/08/1998.

Coherent dynamics of exciton and biexciton resonances in InGaAs/GaAs single quantum wells. / Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Märcher et al.
Proceedings of the 24th International Conference on The Physics of Semiconductors. Singapore: World Scientific, 1999.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Coherent dynamics of exciton and biexciton resonances in InGaAs/GaAs single quantum wells

AU - Borri, Paola

AU - Langbein, Wolfgang

AU - Hvam, Jørn Märcher

AU - Martelli, F.

A2 - Gershoni, David

N1 - Conference code: 24

PY - 1999

Y1 - 1999

N2 - The coherent dynamics of both exciton and biexciton resonances have been investigated in In0.18Ga0.82As/GaAs single quantum wells with thicknesses ranging from 1 to 4 nm, using time-integrated and spectrally-resolved transient four-wave mixing. From the temperature dependence of the exciton dephasing time we obtain linewidth broadening coefficients for acoustic and optical phonons. Biexciton binding energies are extracted from the four-wave mixing response in the spectral domain, and are found to be between 1.5 and 2.6 meV. The temperature dempendence of the dephasing of the exciton-biexciton transition is deduced.

AB - The coherent dynamics of both exciton and biexciton resonances have been investigated in In0.18Ga0.82As/GaAs single quantum wells with thicknesses ranging from 1 to 4 nm, using time-integrated and spectrally-resolved transient four-wave mixing. From the temperature dependence of the exciton dephasing time we obtain linewidth broadening coefficients for acoustic and optical phonons. Biexciton binding energies are extracted from the four-wave mixing response in the spectral domain, and are found to be between 1.5 and 2.6 meV. The temperature dempendence of the dephasing of the exciton-biexciton transition is deduced.

M3 - Article in proceedings

BT - Proceedings of the 24th International Conference on The Physics of Semiconductors

PB - World Scientific

CY - Singapore

T2 - 24th International Conference on The Physics of Semiconductors

Y2 - 2 August 1998 through 7 August 1998

ER -

Coherent dynamics of exciton and biexciton resonances in InGaAs/GaAs single quantum wells

Abstract

Conference

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