Abstract
The coherent dynamics of both exciton and biexciton resonances have been investigated in In0.18Ga0.82As/GaAs single quantum wells with thicknesses ranging from 1 to 4 nm, using time-integrated and spectrally-resolved transient four-wave mixing. From the temperature dependence of the exciton dephasing time we obtain linewidth broadening coefficients for acoustic and optical phonons. Biexciton binding energies are extracted from the four-wave mixing response in the spectral domain, and are found to be between 1.5 and 2.6 meV. The temperature dempendence of the dephasing of the exciton-biexciton transition is deduced.
| Original language | English |
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| Title of host publication | Proceedings of the 24th International Conference on The Physics of Semiconductors |
| Place of Publication | Singapore |
| Publisher | World Scientific |
| Publication date | 1999 |
| Publication status | Published - 1999 |
| Event | 24th International Conference on The Physics of Semiconductors - Jerusalem, Israel Duration: 2 Aug 1998 → 7 Aug 1998 Conference number: 24 http://physics.technion.ac.il/~icps24/ |
Conference
| Conference | 24th International Conference on The Physics of Semiconductors |
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| Number | 24 |
| Country/Territory | Israel |
| City | Jerusalem |
| Period | 02/08/1998 → 07/08/1998 |
| Internet address |