Coherent dynamics of exciton and biexciton resonances in InGaAs/GaAs single quantum wells

Paola Borri, Wolfgang Langbein, Jørn Märcher Hvam, F. Martelli, David Gershoni (Editor)

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Abstract

The coherent dynamics of both exciton and biexciton resonances have been investigated in In0.18Ga0.82As/GaAs single quantum wells with thicknesses ranging from 1 to 4 nm, using time-integrated and spectrally-resolved transient four-wave mixing. From the temperature dependence of the exciton dephasing time we obtain linewidth broadening coefficients for acoustic and optical phonons. Biexciton binding energies are extracted from the four-wave mixing response in the spectral domain, and are found to be between 1.5 and 2.6 meV. The temperature dempendence of the dephasing of the exciton-biexciton transition is deduced.
Original languageEnglish
Title of host publicationProceedings of the 24th International Conference on The Physics of Semiconductors
Place of PublicationSingapore
PublisherWorld Scientific
Publication date1999
Publication statusPublished - 1999
Event24th International Conference on The Physics of Semiconductors - Jerusalem, Israel
Duration: 2 Aug 19987 Aug 1998
Conference number: 24
http://physics.technion.ac.il/~icps24/

Conference

Conference24th International Conference on The Physics of Semiconductors
Number24
CountryIsrael
CityJerusalem
Period02/08/199807/08/1998
Internet address

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