Coherent dynamics of biexcitons in a semiconductor microcavity

P. Borri, W. Langbein, U. Woggon, J.R. Jensen, Jørn Märcher Hvam

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The dephasing time of biexcitons in a semiconductor quantum well microcavity is measured at low temperature using transient four-wave mixing spectroscopy. The homogeneous linewidth corresponding to the dephasing of the transition from the crystal ground state to the biexciton is found to be approximately twice the one measured in a reference quantum well without Bragg reflectors.
Original languageEnglish
JournalPhysica Status Solidi A
Issue number2
Pages (from-to)383-387
Publication statusPublished - 2002

Cite this

Borri, P., Langbein, W., Woggon, U., Jensen, J. R., & Hvam, J. M. (2002). Coherent dynamics of biexcitons in a semiconductor microcavity. Physica Status Solidi A, 190(2), 383-387.