Coherent dynamics of biexcitons in a semiconductor microcavity

P. Borri; W. Langbein; U. Woggon; J.R. Jensen; Jørn Märcher Hvam

Coherent dynamics of biexcitons in a semiconductor microcavity

P. Borri, W. Langbein, U. Woggon, J.R. Jensen, Jørn Märcher Hvam

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

The dephasing time of biexcitons in a semiconductor quantum well microcavity is measured at low temperature using transient four-wave mixing spectroscopy. The homogeneous linewidth corresponding to the dephasing of the transition from the crystal ground state to the biexciton is found to be approximately twice the one measured in a reference quantum well without Bragg reflectors.

Original language	English
Journal	Physica Status Solidi A
Volume	190
Issue number	2
Pages (from-to)	383-387
ISSN	0031-8965
Publication status	Published - 2002

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title = "Coherent dynamics of biexcitons in a semiconductor microcavity",

abstract = "The dephasing time of biexcitons in a semiconductor quantum well microcavity is measured at low temperature using transient four-wave mixing spectroscopy. The homogeneous linewidth corresponding to the dephasing of the transition from the crystal ground state to the biexciton is found to be approximately twice the one measured in a reference quantum well without Bragg reflectors.",

author = "P. Borri and W. Langbein and U. Woggon and J.R. Jensen and Hvam, {J{\o}rn M{\"a}rcher}",

year = "2002",

language = "English",

volume = "190",

pages = "383--387",

journal = "Physica Status Solidi A",

issn = "0031-8965",

publisher = "Wiley-VCH",

number = "2",

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TY - JOUR

T1 - Coherent dynamics of biexcitons in a semiconductor microcavity

AU - Borri, P.

AU - Langbein, W.

AU - Woggon, U.

AU - Jensen, J.R.

AU - Hvam, Jørn Märcher

PY - 2002

Y1 - 2002

N2 - The dephasing time of biexcitons in a semiconductor quantum well microcavity is measured at low temperature using transient four-wave mixing spectroscopy. The homogeneous linewidth corresponding to the dephasing of the transition from the crystal ground state to the biexciton is found to be approximately twice the one measured in a reference quantum well without Bragg reflectors.

AB - The dephasing time of biexcitons in a semiconductor quantum well microcavity is measured at low temperature using transient four-wave mixing spectroscopy. The homogeneous linewidth corresponding to the dephasing of the transition from the crystal ground state to the biexciton is found to be approximately twice the one measured in a reference quantum well without Bragg reflectors.

M3 - Journal article

SN - 0031-8965

VL - 190

SP - 383

EP - 387

JO - Physica Status Solidi A

JF - Physica Status Solidi A

IS - 2

ER -

Coherent dynamics of biexcitons in a semiconductor microcavity

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