Circular Piezoelectric Accelerometer for High Band Width Application

Christian Carstensen Hindrichsen; Jack Larsen; Rasmus Lou-Møller; K. Hansen; Erik Vilain Thomsen

doi:10.1109/ICSENS.2009.5398277

Circular Piezoelectric Accelerometer for High Band Width Application

Christian Carstensen Hindrichsen, Jack Larsen, Rasmus Lou-Møller, K. Hansen, Erik Vilain Thomsen

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference abstract in proceedings › Research › peer-review

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Abstract

An uniaxial bulk-micromachined piezoelectric MEMS accelerometer intended for high bandwidth application is fabricated and characterized. A circular seismic mass (radius = 1200 Â¿m) is suspended by a 20 Â¿m thick annular silicon membrane (radius = 1800 Â¿m). A 24 Â¿m PZT screen printed thick film is used as the sensing material on top of the silicon membrane. Accelerations in the out of plane direction induce a force on the seismic mass bending the membrane and a potential difference is measured in the out of plane direction of the stressed PZT. A resonance frequency of 23.50 kHz, a charge sensitivity of 0.23 pC/g and a voltage sensitivity of 0.24 mV/g are measured.

Original language	English
Title of host publication	IEEE Sensors 2009
Publisher	IEEE
Publication date	2009
ISBN (Print)	978-1-4244-4548-6
DOIs	https://doi.org/10.1109/ICSENS.2009.5398277
Publication status	Published - 2009
Event	8th IEEE Conference on Sensors - Christchurch, New Zealand Duration: 25 Oct 2009 → 28 Oct 2009

Conference

Conference	8th IEEE Conference on Sensors
Country/Territory	New Zealand
City	Christchurch
Period	25/10/2009 → 28/10/2009

Bibliographical note

Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

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title = "Circular Piezoelectric Accelerometer for High Band Width Application",

abstract = "An uniaxial bulk-micromachined piezoelectric MEMS accelerometer intended for high bandwidth application is fabricated and characterized. A circular seismic mass (radius = 1200 {\^A}¿m) is suspended by a 20 {\^A}¿m thick annular silicon membrane (radius = 1800 {\^A}¿m). A 24 {\^A}¿m PZT screen printed thick film is used as the sensing material on top of the silicon membrane. Accelerations in the out of plane direction induce a force on the seismic mass bending the membrane and a potential difference is measured in the out of plane direction of the stressed PZT. A resonance frequency of 23.50 kHz, a charge sensitivity of 0.23 pC/g and a voltage sensitivity of 0.24 mV/g are measured.",

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AU - Hindrichsen, Christian Carstensen

AU - Larsen, Jack

AU - Lou-Møller, Rasmus

AU - Hansen, K.

AU - Thomsen, Erik Vilain

N1 - Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

PY - 2009

Y1 - 2009

N2 - An uniaxial bulk-micromachined piezoelectric MEMS accelerometer intended for high bandwidth application is fabricated and characterized. A circular seismic mass (radius = 1200 Â¿m) is suspended by a 20 Â¿m thick annular silicon membrane (radius = 1800 Â¿m). A 24 Â¿m PZT screen printed thick film is used as the sensing material on top of the silicon membrane. Accelerations in the out of plane direction induce a force on the seismic mass bending the membrane and a potential difference is measured in the out of plane direction of the stressed PZT. A resonance frequency of 23.50 kHz, a charge sensitivity of 0.23 pC/g and a voltage sensitivity of 0.24 mV/g are measured.

AB - An uniaxial bulk-micromachined piezoelectric MEMS accelerometer intended for high bandwidth application is fabricated and characterized. A circular seismic mass (radius = 1200 Â¿m) is suspended by a 20 Â¿m thick annular silicon membrane (radius = 1800 Â¿m). A 24 Â¿m PZT screen printed thick film is used as the sensing material on top of the silicon membrane. Accelerations in the out of plane direction induce a force on the seismic mass bending the membrane and a potential difference is measured in the out of plane direction of the stressed PZT. A resonance frequency of 23.50 kHz, a charge sensitivity of 0.23 pC/g and a voltage sensitivity of 0.24 mV/g are measured.

U2 - 10.1109/ICSENS.2009.5398277

DO - 10.1109/ICSENS.2009.5398277

M3 - Conference abstract in proceedings

SN - 978-1-4244-4548-6

BT - IEEE Sensors 2009

PB - IEEE

T2 - 8th IEEE Conference on Sensors

Y2 - 25 October 2009 through 28 October 2009

ER -

Circular Piezoelectric Accelerometer for High Band Width Application

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