Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications

M. Kollmuß; J. Köhler; H. Ou; W. Fan; D. Chaussende; R. Hock; P. J. Wellmann

doi:10.4028/p-nshb40

Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications

M. Kollmuß, J. Köhler, H. Ou, W. Fan, D. Chaussende, R. Hock, P. J. Wellmann^*

^*Corresponding author for this work

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Abstract

3C-SiC films have been grown on [100] n-doped Si substrates in a horizontal cold wall CVD reactor. Without the use of plasma enhancement, the precursors silane and propane are used to deposit silicon carbide films at T < 1200°C. The structure of the grown films has been investigated via FESEM, XRD and Raman spectroscopy. It has been found that the growth rates are between 200 and 300 nm/h. Additionally, structural analysis give evidence of polycrystalline phases. Reasons for that could be insufficient cracking of the precursors and homogenous nucleation of Si species in the gas phase.

Original language	English
Journal	Materials Science Forum
Volume	1062
Pages (from-to)	119-124
ISSN	0255-5476
DOIs	https://doi.org/10.4028/p-nshb40
Publication status	Published - 2022
Event	13^th European Conference on Silicon Carbide and Related Materials - Vinci International Convention Centre, Tours, France Duration: 24 Oct 2021 → 28 Oct 2021 https://www.ecscrm-2020.com

Conference

Conference	13^th European Conference on Silicon Carbide and Related Materials
Location	Vinci International Convention Centre
Country/Territory	France
City	Tours
Period	24/10/2021 → 28/10/2021
Internet address	https://www.ecscrm-2020.com

Keywords

3C-SiC
Cold wall reactor
CVD
Heteroepitaxy
Low temperature
Void

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title = "Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications",

abstract = "3C-SiC films have been grown on [100] n-doped Si substrates in a horizontal cold wall CVD reactor. Without the use of plasma enhancement, the precursors silane and propane are used to deposit silicon carbide films at T < 1200°C. The structure of the grown films has been investigated via FESEM, XRD and Raman spectroscopy. It has been found that the growth rates are between 200 and 300 nm/h. Additionally, structural analysis give evidence of polycrystalline phases. Reasons for that could be insufficient cracking of the precursors and homogenous nucleation of Si species in the gas phase.",

keywords = "3C-SiC, Cold wall reactor, CVD, Heteroepitaxy, Low temperature, Void",

author = "M. Kollmu{\ss} and J. K{\"o}hler and H. Ou and W. Fan and D. Chaussende and R. Hock and Wellmann, \{P. J.\}",

note = "Publisher Copyright: {\textcopyright} 2022 The Author(s). Published by Trans Tech Publications Ltd, Switzerland.; 13<sup>th</sup> European Conference on Silicon Carbide and Related Materials, ECSCRM 2020·2021 ; Conference date: 24-10-2021 Through 28-10-2021",

year = "2022",

doi = "10.4028/p-nshb40",

language = "English",

volume = "1062",

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T1 - Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications

AU - Kollmuß, M.

AU - Köhler, J.

AU - Ou, H.

AU - Fan, W.

AU - Chaussende, D.

AU - Hock, R.

AU - Wellmann, P. J.

PY - 2022

Y1 - 2022

N2 - 3C-SiC films have been grown on [100] n-doped Si substrates in a horizontal cold wall CVD reactor. Without the use of plasma enhancement, the precursors silane and propane are used to deposit silicon carbide films at T < 1200°C. The structure of the grown films has been investigated via FESEM, XRD and Raman spectroscopy. It has been found that the growth rates are between 200 and 300 nm/h. Additionally, structural analysis give evidence of polycrystalline phases. Reasons for that could be insufficient cracking of the precursors and homogenous nucleation of Si species in the gas phase.

AB - 3C-SiC films have been grown on [100] n-doped Si substrates in a horizontal cold wall CVD reactor. Without the use of plasma enhancement, the precursors silane and propane are used to deposit silicon carbide films at T < 1200°C. The structure of the grown films has been investigated via FESEM, XRD and Raman spectroscopy. It has been found that the growth rates are between 200 and 300 nm/h. Additionally, structural analysis give evidence of polycrystalline phases. Reasons for that could be insufficient cracking of the precursors and homogenous nucleation of Si species in the gas phase.

KW - 3C-SiC

KW - Cold wall reactor

KW - CVD

KW - Heteroepitaxy

KW - Low temperature

KW - Void

U2 - 10.4028/p-nshb40

DO - 10.4028/p-nshb40

M3 - Conference article

AN - SCOPUS:85134230765

SN - 0255-5476

VL - 1062

SP - 119

EP - 124

JO - Materials Science Forum

JF - Materials Science Forum

T2 - 13<sup>th</sup> European Conference on Silicon Carbide and Related Materials

Y2 - 24 October 2021 through 28 October 2021

ER -

Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications

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