Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures

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    Abstract

    When depositing amorphous SrTiO3 (STO) films on crystalline STO substrates by pulsed laser deposition, metallic interfaces are observed, though both materials are band-gap insulators. The interfacial conductivity exhibits strong dependence on oxygen pressure during film growth, which is closely related to the STO plasma expansion in the background gas of oxygen. By controlling the charge balance in the STO plasma with an external bias, V-bias, of -10 V
    Original languageEnglish
    JournalApplied Physics Letters
    Volume98
    Issue number23
    Pages (from-to)232105 (3 pages)
    ISSN0003-6951
    DOIs
    Publication statusPublished - 2011

    Keywords

    • Plasma processing

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