Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures

Yunzhong Chen; Eugen Stamate; Nini Pryds; J. R. Sun; B. G. Shen; Søren Linderoth

doi:10.1063/1.3598391

Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures

Yunzhong Chen, Eugen Stamate, Nini Pryds, J. R. Sun, B. G. Shen, Søren Linderoth

Chinese Academy of Sciences

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

When depositing amorphous SrTiO3 (STO) films on crystalline STO substrates by pulsed laser deposition, metallic interfaces are observed, though both materials are band-gap insulators. The interfacial conductivity exhibits strong dependence on oxygen pressure during film growth, which is closely related to the STO plasma expansion in the background gas of oxygen. By controlling the charge balance in the STO plasma with an external bias, V-bias, of -10 V

Original language	English
Journal	Applied Physics Letters
Volume	98
Issue number	23
Pages (from-to)	232105 (3 pages)
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.3598391
Publication status	Published - 2011

Keywords

Plasma processing

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title = "Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures",

abstract = "When depositing amorphous SrTiO3 (STO) films on crystalline STO substrates by pulsed laser deposition, metallic interfaces are observed, though both materials are band-gap insulators. The interfacial conductivity exhibits strong dependence on oxygen pressure during film growth, which is closely related to the STO plasma expansion in the background gas of oxygen. By controlling the charge balance in the STO plasma with an external bias, V-bias, of -10 V ",

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volume = "98",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures

AU - Chen, Yunzhong

AU - Stamate, Eugen

AU - Pryds, Nini

AU - Sun, J. R.

AU - Shen, B. G.

AU - Linderoth, Søren

PY - 2011

Y1 - 2011

N2 - When depositing amorphous SrTiO3 (STO) films on crystalline STO substrates by pulsed laser deposition, metallic interfaces are observed, though both materials are band-gap insulators. The interfacial conductivity exhibits strong dependence on oxygen pressure during film growth, which is closely related to the STO plasma expansion in the background gas of oxygen. By controlling the charge balance in the STO plasma with an external bias, V-bias, of -10 V

AB - When depositing amorphous SrTiO3 (STO) films on crystalline STO substrates by pulsed laser deposition, metallic interfaces are observed, though both materials are band-gap insulators. The interfacial conductivity exhibits strong dependence on oxygen pressure during film growth, which is closely related to the STO plasma expansion in the background gas of oxygen. By controlling the charge balance in the STO plasma with an external bias, V-bias, of -10 V

KW - Plasma processing

KW - Plasmaprocessering

U2 - 10.1063/1.3598391

DO - 10.1063/1.3598391

M3 - Journal article

SN - 0003-6951

VL - 98

SP - 232105 (3 pages)

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Charge modulated interfacial conductivity in SrTiO3-based oxide heterostructures

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