Characterization of Silicon Rich Oxides with Tunable Optical Band Gap on Sapphire Substrates by Photoluminescence, UV/Vis and Raman Spectroscopy

Wolff-Ragnar Kiebach, Jose Alberto Luna-Lopez, Guilherme Osvaldo Dias, Mariano Aceves-Mijares, Jacobus Willibrordus Swart

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

A detailed analysis of the optical properties of silicon rich oxides (SRO) thin films and the factors that influence them is presented. SRO films with different Si content were synthesized via LPCVD (low pressure chemical vapor deposition) on sapphire substrates. Photoluminescence (PL), UV/Vis and Raman spectroscopy were used to characterize the samples. An intense emission in blue region was found. An interesting fact is that the optical band gap correlates linearly with the reactants ratio, which allows the tuning of the band gap. The influence of parameters such as substrate, Si content, annealing temperature and annealing time on the optical properties are discussed and the possible mechanisms of the photoluminescence are compared with our experimental data.
Original languageEnglish
JournalJOURNAL OF THE MEXICAN CHEMICAL SOCIETY
Volume52
Issue number3
Pages (from-to)212-218
ISSN1870-249X
Publication statusPublished - 2008
Externally publishedYes

Cite this

Kiebach, Wolff-Ragnar ; Alberto Luna-Lopez, Jose ; Dias, Guilherme Osvaldo ; Aceves-Mijares, Mariano ; Swart, Jacobus Willibrordus. / Characterization of Silicon Rich Oxides with Tunable Optical Band Gap on Sapphire Substrates by Photoluminescence, UV/Vis and Raman Spectroscopy. In: JOURNAL OF THE MEXICAN CHEMICAL SOCIETY. 2008 ; Vol. 52, No. 3. pp. 212-218.
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abstract = "A detailed analysis of the optical properties of silicon rich oxides (SRO) thin films and the factors that influence them is presented. SRO films with different Si content were synthesized via LPCVD (low pressure chemical vapor deposition) on sapphire substrates. Photoluminescence (PL), UV/Vis and Raman spectroscopy were used to characterize the samples. An intense emission in blue region was found. An interesting fact is that the optical band gap correlates linearly with the reactants ratio, which allows the tuning of the band gap. The influence of parameters such as substrate, Si content, annealing temperature and annealing time on the optical properties are discussed and the possible mechanisms of the photoluminescence are compared with our experimental data.",
author = "Wolff-Ragnar Kiebach and {Alberto Luna-Lopez}, Jose and Dias, {Guilherme Osvaldo} and Mariano Aceves-Mijares and Swart, {Jacobus Willibrordus}",
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Characterization of Silicon Rich Oxides with Tunable Optical Band Gap on Sapphire Substrates by Photoluminescence, UV/Vis and Raman Spectroscopy. / Kiebach, Wolff-Ragnar; Alberto Luna-Lopez, Jose; Dias, Guilherme Osvaldo; Aceves-Mijares, Mariano; Swart, Jacobus Willibrordus.

In: JOURNAL OF THE MEXICAN CHEMICAL SOCIETY, Vol. 52, No. 3, 2008, p. 212-218.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Characterization of Silicon Rich Oxides with Tunable Optical Band Gap on Sapphire Substrates by Photoluminescence, UV/Vis and Raman Spectroscopy

AU - Kiebach, Wolff-Ragnar

AU - Alberto Luna-Lopez, Jose

AU - Dias, Guilherme Osvaldo

AU - Aceves-Mijares, Mariano

AU - Swart, Jacobus Willibrordus

PY - 2008

Y1 - 2008

N2 - A detailed analysis of the optical properties of silicon rich oxides (SRO) thin films and the factors that influence them is presented. SRO films with different Si content were synthesized via LPCVD (low pressure chemical vapor deposition) on sapphire substrates. Photoluminescence (PL), UV/Vis and Raman spectroscopy were used to characterize the samples. An intense emission in blue region was found. An interesting fact is that the optical band gap correlates linearly with the reactants ratio, which allows the tuning of the band gap. The influence of parameters such as substrate, Si content, annealing temperature and annealing time on the optical properties are discussed and the possible mechanisms of the photoluminescence are compared with our experimental data.

AB - A detailed analysis of the optical properties of silicon rich oxides (SRO) thin films and the factors that influence them is presented. SRO films with different Si content were synthesized via LPCVD (low pressure chemical vapor deposition) on sapphire substrates. Photoluminescence (PL), UV/Vis and Raman spectroscopy were used to characterize the samples. An intense emission in blue region was found. An interesting fact is that the optical band gap correlates linearly with the reactants ratio, which allows the tuning of the band gap. The influence of parameters such as substrate, Si content, annealing temperature and annealing time on the optical properties are discussed and the possible mechanisms of the photoluminescence are compared with our experimental data.

M3 - Journal article

VL - 52

SP - 212

EP - 218

JO - Mexican Chemical Society. Journal

JF - Mexican Chemical Society. Journal

SN - 1870-249X

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