We investigated donor–acceptor-pair emission in N–B-doped 6H-SiC samples by using photoluminescence (PL) and angle-resolved PL. It is shown that n-type doping with concentrations larger than 1018 cm−3 is favorable for observing luminescence, and increasing nitrogen results in stronger luminescence. A dopant concentration difference greater than 4×1018 cm−3 is proposed to help achieve intense PL. Angular-dependent PL was observed that was attributed to the Fabry–Pérot microcavity interference effect, and a strong luminescence intensity in a large emission angle range was also achieved. The results indicate that N–B-doped fluorescent SiC is a good wavelength converter in white LED applications.
|Publication status||Published - 2012|
Ou, Y., Jokubavicius, V., Linnarsson, M., Yakimova, R., Syväjärvi, M., & Ou, H. (2012). Characterization of donor–acceptor-pair emission in fluorescent 6H-SiC. Physica Scripta, 2012(T148), 014003. https://doi.org/10.1088/0031-8949/2012/T148/014003