We investigated donor-acceptor-pair emission in N-B-doped 6H-SiC samples by using photoluminescence (PL) and angle-resolved PL. It is shown that n-type doping with concentrations larger than 10(18) cm(-3) is favorable for observing luminescence, and increasing nitrogen results in stronger luminescence. A dopant concentration difference greater than 4x10(18) cm(-3) is proposed to help achieve intense PL. Angular-dependent PL was observed that was attributed to the Fabry-Perot microcavity interference effect, and a strong luminescence intensity in a large emission angle range was also achieved. The results indicate that N-B-doped fluorescent SiC is a good wavelength converter in white LED applications.
|Number of pages||3|
|Publication status||Published - 2012|
|Event||24th Nordic Semiconductor Meeting - Fuglsøcentret, Aarhus, Denmark|
Duration: 19 Jun 2011 → 22 Jun 2011
Conference number: 24
|Conference||24th Nordic Semiconductor Meeting|
|Period||19/06/2011 → 22/06/2011|