Characterization of donor-acceptor-pair emission in fluorescent 6H-SiC

Yiyu Ou, Valdas Jokubavicius, Margareta Linnarsson, Rositza Yakimova, Mikael Syvajarvi, Haiyan Ou

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

We investigated donor-acceptor-pair emission in N-B-doped 6H-SiC samples by using photoluminescence (PL) and angle-resolved PL. It is shown that n-type doping with concentrations larger than 10(18) cm(-3) is favorable for observing luminescence, and increasing nitrogen results in stronger luminescence. A dopant concentration difference greater than 4x10(18) cm(-3) is proposed to help achieve intense PL. Angular-dependent PL was observed that was attributed to the Fabry-Perot microcavity interference effect, and a strong luminescence intensity in a large emission angle range was also achieved. The results indicate that N-B-doped fluorescent SiC is a good wavelength converter in white LED applications.
Original languageEnglish
Article number014003
JournalPhysica Scripta
Volume2012
Issue numberT148
Number of pages3
ISSN0031-8949
DOIs
Publication statusPublished - 2012
Event24th Nordic Semiconductor Meeting - Fuglsøcentret, Aarhus, Denmark
Duration: 19 Jun 201122 Jun 2011
Conference number: 24

Conference

Conference24th Nordic Semiconductor Meeting
Number24
LocationFuglsøcentret
CountryDenmark
CityAarhus
Period19/06/201122/06/2011

Keywords

  • Physics
  • Luminescence
  • Efficiency

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