Characterization of a Ga-assisted GaAs nanowire array solar cell on si substrate

J. P. Boulanger, A. C. E. Chia, B. Wood, Sadegh Yazdi, Takeshi Kasama, M. Aagesen, R. R. LaPierre

    Research output: Contribution to journalJournal articleResearchpeer-review


    A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is presented. A Ga-assisted vapor–liquid–solid growth mechanism was used for the formation of a patterned array of radial p-i-n GaAs NWs encapsulated in AlInP passivation. Novel device fabrication utilizing facet-dependent properties to minimize passivation layer removal for electrical contacting is demonstrated. Thorough electrical characterization and analysis of the cell is reported. The electrostatic potential distribution across the radial p-i-n junction GaAs NW is investigated by off-axis electron holography.
    Original languageEnglish
    JournalIEEE Journal of Photovoltaics
    Issue number3
    Pages (from-to)661-667
    Number of pages7
    Publication statusPublished - 2016


    • Gallium arsenide
    • Nanowires
    • Photovoltaic (PV) cells


    Dive into the research topics of 'Characterization of a Ga-assisted GaAs nanowire array solar cell on si substrate'. Together they form a unique fingerprint.

    Cite this