Characterization by Raman scattering, x-ray diffraction, and transmission electron microscopy of (AlAs)m(InAs)m short period superlattices grown by migration enhanced epitaxy

J. Bradshaw, X.J. Song, J.R. Shealy, J. G. Zhu, H. Østergaard

Research output: Contribution to journalJournal articleResearchpeer-review

251 Downloads (Pure)

Abstract

We report growth of (InAs)1(AlAs)1 and (InAs)2(AlAs)2 strained layer superlattices by migration enhanced epitaxy. The samples were grown on InP (001) substrates and characterized by Raman spectroscopy, x-ray diffraction, and transmission electron microscopy. Satellite peaks in the x-ray data confirm the intended periodicity and indicate the presence of some disorder in the monolayer sample. The energies of the zone folded and quantum confined optic phonons are in reasonable agreement with calculations based on one-dimensional elastic continuum and linear chain models. Journal of Applied Physics is copyrighted by The American Institute of Physics.
Original languageEnglish
JournalJournal of Applied Physics
Volume72
Issue number1
Pages (from-to)308-310
ISSN0021-8979
DOIs
Publication statusPublished - 1992

Bibliographical note

Copyright (1992) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Fingerprint Dive into the research topics of 'Characterization by Raman scattering, x-ray diffraction, and transmission electron microscopy of (AlAs)m(InAs)m short period superlattices grown by migration enhanced epitaxy'. Together they form a unique fingerprint.

Cite this