Characterization and optimal design of silicon-rich nitride nonlinear waveguides for 2 µm wavelength band

Zhihua Tu, Daru Chen, Hao Hu, Shiming Gao, Xiaowei Guan*

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

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Abstract

Optical communication using the 2 µm wavelength band is attracting growing attention for the sake of mitigating the information ‘capacity crunch’ on the way, where on-chip nonlinear waveguides can play vital roles. Here, silicon-rich nitride (SRN) ridge waveguides with different widths and rib heights are fabricated and measured. Linear characterizations show a loss of ~2 dB/cm of the SRN ridge waveguides and four-wave mixing (FWM) experiments with a continuous wave (CW) pump reveal a nonlinear refractive index of ~1.13 × 10−18 m2 /W of the SRN material around the wavelength 1950 nm. With the extracted parameters, dimensions of the SRN ridge waveguides are optimally designed for improved nonlinear performances for the 2 µm band, i.e., a maximal nonlinear figure of merit (i.e., the ratio of nonlinearity to loss) of 0.0804 W−1 or a super-broad FWM bandwidth of 518 nm. Our results and design method open up new possibilities for achieving high-performance on-chip nonlinear waveguides for long-wavelength optical communications.

Original languageEnglish
Article number8087
JournalApplied Sciences (switzerland)
Volume10
Issue number22
Pages (from-to)1-12
ISSN2076-3417
DOIs
Publication statusPublished - 2 Nov 2020

Keywords

  • Conversion bandwidth
  • Four-wave mixing
  • Nonlinear figure of merit
  • Ridge waveguide
  • Silicon-rich nitride

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