Channel waveguides formed by ion implantation of 20 % Ge doped
                silica

P. Leech; M. Faith; M. C. Ridgway; Otto Leistiko

doi:10.1049/el:19960684

Channel waveguides formed by ion implantation of 20 % Ge doped silica

P. Leech, M. Faith, M. C. Ridgway, Otto Leistiko

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

The implantation of 20% Ge-doped silica with MeV Si or Ge ions has been used to produce singlemode channel waveguides. The germanosilicate film was grown by plasma enhanced chemical vapour deposition. For implantation with either Si or Ge ions, the attenuation loss was measured as 0.15-0.25dB/cm at 1300nm and 1.5-1.8dB/cm at 1550nm.

Original language	English
Journal	Electronics Letters
Volume	32
Issue number	11
Pages (from-to)	1000-1002
ISSN	0013-5194
DOIs	https://doi.org/10.1049/el:19960684
Publication status	Published - 1996

Access to Document

10.1049/el:19960684

OpenUrl availability

Full text

Cite this

@article{5b44aa6ee996416c9eb387643564838b,

title = "Channel waveguides formed by ion implantation of 20 % Ge doped silica",

abstract = "The implantation of 20% Ge-doped silica with MeV Si or Ge ions has been used to produce singlemode channel waveguides. The germanosilicate film was grown by plasma enhanced chemical vapour deposition. For implantation with either Si or Ge ions, the attenuation loss was measured as 0.15-0.25dB/cm at 1300nm and 1.5-1.8dB/cm at 1550nm.",

author = "P. Leech and M. Faith and Ridgway, {M. C.} and Otto Leistiko",

year = "1996",

doi = "10.1049/el:19960684",

language = "English",

volume = "32",

pages = "1000--1002",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "11",

}

TY - JOUR

T1 - Channel waveguides formed by ion implantation of 20 % Ge doped silica

AU - Leech, P.

AU - Faith, M.

AU - Ridgway, M. C.

AU - Leistiko, Otto

PY - 1996

Y1 - 1996

N2 - The implantation of 20% Ge-doped silica with MeV Si or Ge ions has been used to produce singlemode channel waveguides. The germanosilicate film was grown by plasma enhanced chemical vapour deposition. For implantation with either Si or Ge ions, the attenuation loss was measured as 0.15-0.25dB/cm at 1300nm and 1.5-1.8dB/cm at 1550nm.

AB - The implantation of 20% Ge-doped silica with MeV Si or Ge ions has been used to produce singlemode channel waveguides. The germanosilicate film was grown by plasma enhanced chemical vapour deposition. For implantation with either Si or Ge ions, the attenuation loss was measured as 0.15-0.25dB/cm at 1300nm and 1.5-1.8dB/cm at 1550nm.

U2 - 10.1049/el:19960684

DO - 10.1049/el:19960684

M3 - Journal article

SN - 0013-5194

VL - 32

SP - 1000

EP - 1002

JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

Channel waveguides formed by ion implantation of 20 % Ge doped silica

Abstract

Access to Document

OpenUrl availability

Fingerprint

Cite this