Channel waveguides formed by ion implantation of 20 % Ge doped silica

P. Leech, M. Faith, M. C. Ridgway, Otto Leistiko

    Research output: Contribution to journalJournal articleResearchpeer-review

    Original languageEnglish
    JournalElectronics Letters
    Volume32
    Pages (from-to)1000-1002
    ISSN0013-5194
    Publication statusPublished - 1996

    Cite this

    Leech, P., Faith, M., Ridgway, M. C., & Leistiko, O. (1996). Channel waveguides formed by ion implantation of 20 % Ge doped silica. Electronics Letters, 32, 1000-1002.
    Leech, P. ; Faith, M. ; Ridgway, M. C. ; Leistiko, Otto. / Channel waveguides formed by ion implantation of 20 % Ge doped silica. In: Electronics Letters. 1996 ; Vol. 32. pp. 1000-1002.
    @article{5b44aa6ee996416c9eb387643564838b,
    title = "Channel waveguides formed by ion implantation of 20 {\%} Ge doped silica",
    author = "P. Leech and M. Faith and Ridgway, {M. C.} and Otto Leistiko",
    year = "1996",
    language = "English",
    volume = "32",
    pages = "1000--1002",
    journal = "Electronics Letters",
    issn = "0013-5194",
    publisher = "The/Institution of Engineering and Technology",

    }

    Leech, P, Faith, M, Ridgway, MC & Leistiko, O 1996, 'Channel waveguides formed by ion implantation of 20 % Ge doped silica', Electronics Letters, vol. 32, pp. 1000-1002.

    Channel waveguides formed by ion implantation of 20 % Ge doped silica. / Leech, P.; Faith, M.; Ridgway, M. C.; Leistiko, Otto.

    In: Electronics Letters, Vol. 32, 1996, p. 1000-1002.

    Research output: Contribution to journalJournal articleResearchpeer-review

    TY - JOUR

    T1 - Channel waveguides formed by ion implantation of 20 % Ge doped silica

    AU - Leech, P.

    AU - Faith, M.

    AU - Ridgway, M. C.

    AU - Leistiko, Otto

    PY - 1996

    Y1 - 1996

    M3 - Journal article

    VL - 32

    SP - 1000

    EP - 1002

    JO - Electronics Letters

    JF - Electronics Letters

    SN - 0013-5194

    ER -

    Leech P, Faith M, Ridgway MC, Leistiko O. Channel waveguides formed by ion implantation of 20 % Ge doped silica. Electronics Letters. 1996;32:1000-1002.