Channel waveguides formed by ion implantation of 20 % Ge doped
                silica

P. Leech, M. Faith, M. C. Ridgway, Otto Leistiko

Research output: Contribution to journal › Journal article › Research › peer-review

Cite this

@article{5b44aa6ee996416c9eb387643564838b,

title = "Channel waveguides formed by ion implantation of 20 % Ge doped silica",

author = "P. Leech and M. Faith and Ridgway, {M. C.} and Otto Leistiko",

year = "1996",

language = "English",

volume = "32",

pages = "1000--1002",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "The/Institution of Engineering and Technology",

}