Channel waveguides formed by ion implantation of 20 % Ge doped silica

P. Leech, M. Faith, M. C. Ridgway, Otto Leistiko

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    The implantation of 20% Ge-doped silica with MeV Si or Ge ions has been used to produce singlemode channel waveguides. The germanosilicate film was grown by plasma enhanced chemical vapour deposition. For implantation with either Si or Ge ions, the attenuation loss was measured as 0.15-0.25dB/cm at 1300nm and 1.5-1.8dB/cm at 1550nm.
    Original languageEnglish
    JournalElectronics Letters
    Volume32
    Issue number11
    Pages (from-to)1000-1002
    ISSN0013-5194
    DOIs
    Publication statusPublished - 1996

    Fingerprint

    Dive into the research topics of 'Channel waveguides formed by ion implantation of 20 % Ge doped silica'. Together they form a unique fingerprint.

    Cite this