Challenges for 2.5D and 3D integration of InP HBT technology

Bertrand Ardouin; Tom K. Johansen; Antoine Chauvet; Romain Hersent; Virgini Nodjiadjim; Agnieszka Konczykowska; Nil Davy; Muriel Riet; Colin Mismer

Challenges for 2.5D and 3D integration of InP HBT technology

Bertrand Ardouin, Tom K. Johansen, Antoine Chauvet, Romain Hersent, Virgini Nodjiadjim, Agnieszka Konczykowska, Nil Davy, Muriel Riet, Colin Mismer

École polytechnique

Research output: Chapter in Book/Report/Conference proceeding › Book chapter › Research › peer-review

Abstract

Indium phosphide (InP) double heterojunction bipolar transistor (D-HBT) technology can be co-integrated with silicon (e.g., silicon-on-insulator (SOI), fully depleted SOI (FDSOI), silicon germanium bipolar complementary metal-oxyde semiconductor (SiGe BiCMOS)) and antennas in order to benefit from their superior high-frequency performances in a costeffective manner (using 2.5D, 3D integration techniques), while benefiting from the higher integration level provided by silicon ICs. This paper presents the strategic and practical InP D-HBT technology development challenges for the successful 2.5D/3D integration of millimeter wave and subTHz applications from the perspective of InP manufacturing.

Original language	English
Title of host publication	Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications
Editors	Björn Debaillie, Philippe Ferrari, Didier Belot, François Brunier, Christophe Gaquiere, Pierre Busson, Urtė Steikūnienė
Publisher	River Publishers
Publication date	2024
Pages	81-90
ISBN (Print)	978-877004665-7
ISBN (Electronic)	978-877004664-0
Publication status	Published - 2024

Keywords

2.5D
3D integration
Double heterojunction bipolar transistor (D-HBT)
Indium phosphide
InP/InGaAs
Modeling
Terahertz (THz)

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Ardouin, B., Johansen, T. K., Chauvet, A., Hersent, R., Nodjiadjim, V., Konczykowska, A., Davy, N., Riet, M., & Mismer, C. (2024). Challenges for 2.5D and 3D integration of InP HBT technology. In B. Debaillie, P. Ferrari, D. Belot, F. Brunier, C. Gaquiere, P. Busson, & U. Steikūnienė (Eds.), Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications (pp. 81-90). River Publishers.

Ardouin, Bertrand ; Johansen, Tom K. ; Chauvet, Antoine et al. / Challenges for 2.5D and 3D integration of InP HBT technology. Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications. editor / Björn Debaillie ; Philippe Ferrari ; Didier Belot ; François Brunier ; Christophe Gaquiere ; Pierre Busson ; Urtė Steikūnienė. River Publishers, 2024. pp. 81-90

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title = "Challenges for 2.5D and 3D integration of InP HBT technology",

abstract = "Indium phosphide (InP) double heterojunction bipolar transistor (D-HBT) technology can be co-integrated with silicon (e.g., silicon-on-insulator (SOI), fully depleted SOI (FDSOI), silicon germanium bipolar complementary metal-oxyde semiconductor (SiGe BiCMOS)) and antennas in order to benefit from their superior high-frequency performances in a costeffective manner (using 2.5D, 3D integration techniques), while benefiting from the higher integration level provided by silicon ICs. This paper presents the strategic and practical InP D-HBT technology development challenges for the successful 2.5D/3D integration of millimeter wave and subTHz applications from the perspective of InP manufacturing.",

keywords = "2.5D, 3D integration, Double heterojunction bipolar transistor (D-HBT), Indium phosphide, InP/InGaAs, Modeling, Terahertz (THz)",

author = "Bertrand Ardouin and Johansen, {Tom K.} and Antoine Chauvet and Romain Hersent and Virgini Nodjiadjim and Agnieszka Konczykowska and Nil Davy and Muriel Riet and Colin Mismer",

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editor = "Debaillie, {Bj{\"o}rn } and Philippe Ferrari and Belot, {Didier } and Brunier, {Fran{\c c}ois } and Gaquiere, {Christophe } and Busson, {Pierre } and Urtė Steikūnienė",

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Ardouin, B, Johansen, TK, Chauvet, A, Hersent, R, Nodjiadjim, V, Konczykowska, A, Davy, N, Riet, M & Mismer, C 2024, Challenges for 2.5D and 3D integration of InP HBT technology. in B Debaillie, P Ferrari, D Belot, F Brunier, C Gaquiere, P Busson & U Steikūnienė (eds), Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications. River Publishers, pp. 81-90.

Challenges for 2.5D and 3D integration of InP HBT technology. / Ardouin, Bertrand; Johansen, Tom K.; Chauvet, Antoine et al.
Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications. ed. / Björn Debaillie; Philippe Ferrari; Didier Belot; François Brunier; Christophe Gaquiere; Pierre Busson; Urtė Steikūnienė. River Publishers, 2024. p. 81-90.

Research output: Chapter in Book/Report/Conference proceeding › Book chapter › Research › peer-review

TY - CHAP

T1 - Challenges for 2.5D and 3D integration of InP HBT technology

AU - Ardouin, Bertrand

AU - Johansen, Tom K.

AU - Chauvet, Antoine

AU - Hersent, Romain

AU - Nodjiadjim, Virgini

AU - Konczykowska, Agnieszka

AU - Davy, Nil

AU - Riet, Muriel

AU - Mismer, Colin

PY - 2024

Y1 - 2024

N2 - Indium phosphide (InP) double heterojunction bipolar transistor (D-HBT) technology can be co-integrated with silicon (e.g., silicon-on-insulator (SOI), fully depleted SOI (FDSOI), silicon germanium bipolar complementary metal-oxyde semiconductor (SiGe BiCMOS)) and antennas in order to benefit from their superior high-frequency performances in a costeffective manner (using 2.5D, 3D integration techniques), while benefiting from the higher integration level provided by silicon ICs. This paper presents the strategic and practical InP D-HBT technology development challenges for the successful 2.5D/3D integration of millimeter wave and subTHz applications from the perspective of InP manufacturing.

AB - Indium phosphide (InP) double heterojunction bipolar transistor (D-HBT) technology can be co-integrated with silicon (e.g., silicon-on-insulator (SOI), fully depleted SOI (FDSOI), silicon germanium bipolar complementary metal-oxyde semiconductor (SiGe BiCMOS)) and antennas in order to benefit from their superior high-frequency performances in a costeffective manner (using 2.5D, 3D integration techniques), while benefiting from the higher integration level provided by silicon ICs. This paper presents the strategic and practical InP D-HBT technology development challenges for the successful 2.5D/3D integration of millimeter wave and subTHz applications from the perspective of InP manufacturing.

KW - 2.5D

KW - 3D integration

KW - Double heterojunction bipolar transistor (D-HBT)

KW - Indium phosphide

KW - InP/InGaAs

KW - Modeling

KW - Terahertz (THz)

M3 - Book chapter

SN - 978-877004665-7

SP - 81

EP - 90

BT - Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications

A2 - Debaillie, Björn

A2 - Ferrari, Philippe

A2 - Belot, Didier

A2 - Brunier, François

A2 - Gaquiere, Christophe

A2 - Busson, Pierre

A2 - Steikūnienė, Urtė

PB - River Publishers

ER -

Challenges for 2.5D and 3D integration of InP HBT technology

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Keywords

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