TY - JOUR
T1 - Catalyst Interface Engineering for Improved 2D Film Lift-Off and Transfer
AU - Wang, Ruizhi
AU - Whelan, Patrick Rebsdorf
AU - Braeuninger-Weimer, Philipp
AU - Tappertzhofen, Stefan
AU - Alexander-Webber, Jack A
AU - Van Veldhoven, Zenas A.
AU - Kidambi, Piran R
AU - Jessen, Bjarke Sørensen
AU - Booth, Tim
AU - Bøggild, Peter
AU - Hofmann, Stephan
PY - 2016
Y1 - 2016
N2 - The mechanisms by which chemical vapor deposited (CVD) graphene and hexagonal boron nitride (h-BN) films can be released from a growth catalyst, such as widely used copper (Cu) foil, are systematically explored as a basis for an improved lift-off transfer. We show how intercalation processes allow the local Cu oxidation at the interface followed by selective oxide dissolution, which gently releases the 2D material (2DM) film. Interfacial composition change and selective dissolution can thereby be achieved in a single step or split into two individual process steps. We demonstrate that this method is not only highly versatile but also yields graphene and h-BN films of high quality regarding surface contamination, layer coherence, defects, and electronic properties, without requiring additional post-transfer annealing. We highlight how such transfers rely on targeted corrosion at the catalyst interface and discuss this in context of the wider CVD growth and 2DM transfer literature, thereby fostering an improved general understanding of widely used transfer processes, which is essential to numerous other applications.
AB - The mechanisms by which chemical vapor deposited (CVD) graphene and hexagonal boron nitride (h-BN) films can be released from a growth catalyst, such as widely used copper (Cu) foil, are systematically explored as a basis for an improved lift-off transfer. We show how intercalation processes allow the local Cu oxidation at the interface followed by selective oxide dissolution, which gently releases the 2D material (2DM) film. Interfacial composition change and selective dissolution can thereby be achieved in a single step or split into two individual process steps. We demonstrate that this method is not only highly versatile but also yields graphene and h-BN films of high quality regarding surface contamination, layer coherence, defects, and electronic properties, without requiring additional post-transfer annealing. We highlight how such transfers rely on targeted corrosion at the catalyst interface and discuss this in context of the wider CVD growth and 2DM transfer literature, thereby fostering an improved general understanding of widely used transfer processes, which is essential to numerous other applications.
KW - 2D materials
KW - CVD
KW - Catalyst
KW - Graphene
KW - h-BN
KW - Transfer
U2 - 10.1021/acsami.6b11685
DO - 10.1021/acsami.6b11685
M3 - Journal article
C2 - 27934130
SN - 1944-8244
VL - 8
SP - 33072
EP - 33082
JO - A C S Applied Materials and Interfaces
JF - A C S Applied Materials and Interfaces
IS - 48
ER -