Carrier Transfer between InGaAs/GaAs Quantum Wells Separated by Thick Barriers

Paola Borri, M. Gurioli, M. Colocci, A Patanè, M. Grassi Alessi, M. Capizzi, F. Martelli

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    We have studied the carrier transfer between two adjacent wells of different width separated by a 100 nm thick barrier. At low temperatures (T < 30 K) the transfer has very little dependence (if any) on T. For T > 30 K: the transfer strongly increases, denoting that the thermal escape out of the QW becomes the main mechanism. Finally, a drastic quenching of the transfer is found for temperatures higher than 50 to 70 K, suggesting the activation of a further non-radiative channel different from the thermal escape.
    Original languageEnglish
    JournalPHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    Volume164
    Issue number1
    Pages (from-to)227-230
    ISSN0031-8965
    DOIs
    Publication statusPublished - 1997

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