Carrier-selective p- and n-contacts for efficient and stable photocatalytic water reduction

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Abstract

The successful realization of carrier-selective contacts for crystalline silicon (c-Si) based device for pho-tocatalytic hydrogen production has been demonstrated. The proposed TiO2protected carrier-selectivecontacts resemble a metal-oxide-semiconductor configuration, including a highly-doped nanocrystallinesilicon (nc-Si) and a tunnel oxide, thereby form a heterostructure with the c-Si substrate. By substitutingconventional pn+-junction Si by c-Si/SiOX/nc-Si structure for both front and back contacts we demon-strate a 16% increase in photovoltage (an open circuit voltage of 584 mV under AM 1.5G conditions).TiOprotected carrier-selective photoelectrodes showed excellent long-term durability in acidic aqueoussolution having stable photocurrent output for more than 40 days, implying that the proposed carrier-selective contact is a promising configuration to substitute for the conventional pn-junction based c-Siphotocathodes.
Original languageEnglish
JournalCatalysis Today
Volume290
Pages (from-to)59-64
ISSN0920-5861
DOIs
Publication statusPublished - 2017

Keywords

  • Photocatalysis
  • Carrier-selective contact
  • hydrogen evolution
  • metal-oxide-semiconductor

Cite this

@article{bb55a674dab644fbbe75adf99fd3289e,
title = "Carrier-selective p- and n-contacts for efficient and stable photocatalytic water reduction",
abstract = "The successful realization of carrier-selective contacts for crystalline silicon (c-Si) based device for pho-tocatalytic hydrogen production has been demonstrated. The proposed TiO2protected carrier-selectivecontacts resemble a metal-oxide-semiconductor configuration, including a highly-doped nanocrystallinesilicon (nc-Si) and a tunnel oxide, thereby form a heterostructure with the c-Si substrate. By substitutingconventional pn+-junction Si by c-Si/SiOX/nc-Si structure for both front and back contacts we demon-strate a 16{\%} increase in photovoltage (an open circuit voltage of 584 mV under AM 1.5G conditions).TiO2 protected carrier-selective photoelectrodes showed excellent long-term durability in acidic aqueoussolution having stable photocurrent output for more than 40 days, implying that the proposed carrier-selective contact is a promising configuration to substitute for the conventional pn-junction based c-Siphotocathodes.",
keywords = "Photocatalysis, Carrier-selective contact, hydrogen evolution, metal-oxide-semiconductor",
author = "Dowon Bae and Thomas Pedersen and Brian Seger and Beniamino Iandolo and Ole Hansen and Vesborg, {Peter Christian Kj{\ae}rgaard} and Ib Chorkendorff",
year = "2017",
doi = "10.1016/j.cattod.2016.11.028",
language = "English",
volume = "290",
pages = "59--64",
journal = "Catalysis Today",
issn = "0920-5861",
publisher = "Elsevier",

}

Carrier-selective p- and n-contacts for efficient and stable photocatalytic water reduction. / Bae, Dowon; Pedersen, Thomas; Seger, Brian; Iandolo, Beniamino; Hansen, Ole; Vesborg, Peter Christian Kjærgaard; Chorkendorff, Ib.

In: Catalysis Today, Vol. 290, 2017, p. 59-64.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Carrier-selective p- and n-contacts for efficient and stable photocatalytic water reduction

AU - Bae, Dowon

AU - Pedersen, Thomas

AU - Seger, Brian

AU - Iandolo, Beniamino

AU - Hansen, Ole

AU - Vesborg, Peter Christian Kjærgaard

AU - Chorkendorff, Ib

PY - 2017

Y1 - 2017

N2 - The successful realization of carrier-selective contacts for crystalline silicon (c-Si) based device for pho-tocatalytic hydrogen production has been demonstrated. The proposed TiO2protected carrier-selectivecontacts resemble a metal-oxide-semiconductor configuration, including a highly-doped nanocrystallinesilicon (nc-Si) and a tunnel oxide, thereby form a heterostructure with the c-Si substrate. By substitutingconventional pn+-junction Si by c-Si/SiOX/nc-Si structure for both front and back contacts we demon-strate a 16% increase in photovoltage (an open circuit voltage of 584 mV under AM 1.5G conditions).TiO2 protected carrier-selective photoelectrodes showed excellent long-term durability in acidic aqueoussolution having stable photocurrent output for more than 40 days, implying that the proposed carrier-selective contact is a promising configuration to substitute for the conventional pn-junction based c-Siphotocathodes.

AB - The successful realization of carrier-selective contacts for crystalline silicon (c-Si) based device for pho-tocatalytic hydrogen production has been demonstrated. The proposed TiO2protected carrier-selectivecontacts resemble a metal-oxide-semiconductor configuration, including a highly-doped nanocrystallinesilicon (nc-Si) and a tunnel oxide, thereby form a heterostructure with the c-Si substrate. By substitutingconventional pn+-junction Si by c-Si/SiOX/nc-Si structure for both front and back contacts we demon-strate a 16% increase in photovoltage (an open circuit voltage of 584 mV under AM 1.5G conditions).TiO2 protected carrier-selective photoelectrodes showed excellent long-term durability in acidic aqueoussolution having stable photocurrent output for more than 40 days, implying that the proposed carrier-selective contact is a promising configuration to substitute for the conventional pn-junction based c-Siphotocathodes.

KW - Photocatalysis

KW - Carrier-selective contact

KW - hydrogen evolution

KW - metal-oxide-semiconductor

U2 - 10.1016/j.cattod.2016.11.028

DO - 10.1016/j.cattod.2016.11.028

M3 - Journal article

VL - 290

SP - 59

EP - 64

JO - Catalysis Today

JF - Catalysis Today

SN - 0920-5861

ER -