Carrier lifetime of GeSn measured by spectrally resolved picosecond photoluminescence spectroscopy

Brian Julsgaard, Nils von den Driesch, Peter Tidemand-Lichtenberg, Christian Pedersen, Zoran Ikonic, Dan Buca

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

We present an experimental setup capable of time-resolved photoluminescence spectroscopy for photon energies in the range of 0.51 to 0.56 eV with an instrument time response of 75 ps. The detection system is based on optical parametric three-wave mixing, operates at room temperature, has spectral resolving power, and is shown to be well suited for investigating dynamical processes in germanium-tin alloys. In particular, the carrier lifetime of a direct-bandgap Ge1−푥Sn푥 film with concentration 푥=12.5% and biaxial strain −0.55% is determined to be 217±15  ps at a temperature of 20 K. A room-temperature investigation indicates that the variation in this lifetime with temperature is very modest. The characteristics of the photoluminescence as a function of pump fluence are discussed.

Original languageEnglish
JournalPhotonics Research
Volume8
Issue number6
Pages (from-to)788-798
ISSN2327-9125
DOIs
Publication statusPublished - 2020

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