Carrier dynamics in submonolayer InGaAs/GaAs quantum dots

Zhangcheng Xu, Yating Zhang, Jørn Märcher Hvam, Jingjun Xu, Xiaoshuang Chen, Wei Lu

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Abstract

Carrier dynamics of submonolayer InGaAs/GaAs quantum dots (QDs) were studied by microphotoluminecence (MPL), selectively excited photoluminescence (SEPL), and time-resolved photoluminescence (TRPL). MPL and SEPL show the coexistence of localized and delocalized states, and different local phonon modes. TRPL reveals shorter recombination lifetimes and longer capture times for the QDs with higher emission energy. This suggests that the smallest SML QDs are formed by perfectly vertically correlated two-dimensional InAs islands, having the highest In content and the lowest emission energy, while a slight deviation from the perfectly vertical correlation produces larger QDs with lower In content and higher emission energy.
Original languageEnglish
JournalApplied Physics Letters
Volume89
Issue number1
Pages (from-to)013113
ISSN0003-6951
DOIs
Publication statusPublished - 2006

Bibliographical note

Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

  • LASERS

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