Carrier dynamics and gain spectra at room-temperature in
                epitaxial ZNO thin films

Ping Yu; Jørn Märcher Hvam; K. S. Wong; Z. K. Tang; H. Wang; G. K. L. Wong; M. Kawasaki; A. Ohtomo; H. Koinuma; David Gershoni

Carrier dynamics and gain spectra at room-temperature in epitaxial ZNO thin films

Ping Yu, Jørn Märcher Hvam, K. S. Wong, Z. K. Tang, H. Wang, G. K. L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, David Gershoni (Editor)

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

Carrier dynamics of epitaxial ZnO thin film was investigated using a frequency up-conversion tehcnique. At lower carrier densities, the decay time of free exciton recombination was measured to be 24 ps. Rapid decay times of a few picoseconds were observed at higher carrier densities, which show a transition of two dynamic processes. The comparison of calculated gain spectrum and experimental data gave evidence that the transition is form exciton-exciton scattering to the recombination of electron hole plasma.

Original language	English
Title of host publication	Proceedings of the 24th International Conference on The Physics of Semiconductors
Place of Publication	Singapore
Publisher	World Scientific
Publication date	1999
Publication status	Published - 1999
Event	24th International Conference on The Physics of Semiconductors - Jerusalem, Israel Duration: 2 Aug 1998 → 7 Aug 1998 Conference number: 24 http://physics.technion.ac.il/~icps24/

Conference

Conference	24th International Conference on The Physics of Semiconductors
Number	24
Country/Territory	Israel
City	Jerusalem
Period	02/08/1998 → 07/08/1998
Internet address	http://physics.technion.ac.il/~icps24/

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Cite this

@inproceedings{e65311ea5e9d45afa4db7066790d15a2,

title = "Carrier dynamics and gain spectra at room-temperature in epitaxial ZNO thin films",

abstract = "Carrier dynamics of epitaxial ZnO thin film was investigated using a frequency up-conversion tehcnique. At lower carrier densities, the decay time of free exciton recombination was measured to be 24 ps. Rapid decay times of a few picoseconds were observed at higher carrier densities, which show a transition of two dynamic processes. The comparison of calculated gain spectrum and experimental data gave evidence that the transition is form exciton-exciton scattering to the recombination of electron hole plasma.",

author = "Ping Yu and Hvam, {J{\o}rn M{\"a}rcher} and Wong, {K. S.} and Tang, {Z. K.} and H. Wang and Wong, {G. K. L.} and M. Kawasaki and A. Ohtomo and H. Koinuma and David Gershoni",

year = "1999",

language = "English",

booktitle = "Proceedings of the 24th International Conference on The Physics of Semiconductors",

publisher = "World Scientific",

address = "Singapore",

note = "24th International Conference on The Physics of Semiconductors, ICPS 24 ; Conference date: 02-08-1998 Through 07-08-1998",

url = "http://physics.technion.ac.il/~icps24/",

}

Yu, P, Hvam, JM, Wong, KS, Tang, ZK, Wang, H, Wong, GKL, Kawasaki, M, Ohtomo, A, Koinuma, H & Gershoni, D (ed.) 1999, Carrier dynamics and gain spectra at room-temperature in epitaxial ZNO thin films. in Proceedings of the 24th International Conference on The Physics of Semiconductors. World Scientific, Singapore, 24th International Conference on The Physics of Semiconductors, Jerusalem, Israel, 02/08/1998.

Carrier dynamics and gain spectra at room-temperature in epitaxial ZNO thin films. / Yu, Ping; Hvam, Jørn Märcher; Wong, K. S. et al.
Proceedings of the 24th International Conference on The Physics of Semiconductors. Singapore: World Scientific, 1999.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Carrier dynamics and gain spectra at room-temperature in epitaxial ZNO thin films

AU - Yu, Ping

AU - Hvam, Jørn Märcher

AU - Wong, K. S.

AU - Tang, Z. K.

AU - Wang, H.

AU - Wong, G. K. L.

AU - Kawasaki, M.

AU - Ohtomo, A.

AU - Koinuma, H.

A2 - Gershoni, David

N1 - Conference code: 24

PY - 1999

Y1 - 1999

N2 - Carrier dynamics of epitaxial ZnO thin film was investigated using a frequency up-conversion tehcnique. At lower carrier densities, the decay time of free exciton recombination was measured to be 24 ps. Rapid decay times of a few picoseconds were observed at higher carrier densities, which show a transition of two dynamic processes. The comparison of calculated gain spectrum and experimental data gave evidence that the transition is form exciton-exciton scattering to the recombination of electron hole plasma.

AB - Carrier dynamics of epitaxial ZnO thin film was investigated using a frequency up-conversion tehcnique. At lower carrier densities, the decay time of free exciton recombination was measured to be 24 ps. Rapid decay times of a few picoseconds were observed at higher carrier densities, which show a transition of two dynamic processes. The comparison of calculated gain spectrum and experimental data gave evidence that the transition is form exciton-exciton scattering to the recombination of electron hole plasma.

M3 - Article in proceedings

BT - Proceedings of the 24th International Conference on The Physics of Semiconductors

PB - World Scientific

CY - Singapore

T2 - 24th International Conference on The Physics of Semiconductors

Y2 - 2 August 1998 through 7 August 1998

ER -