Carrier dynamics and gain spectra at room-temperature in epitaxial ZNO thin films

Ping Yu, Jørn Märcher Hvam, K. S. Wong, Z. K. Tang, H. Wang, G. K. L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, David Gershoni (Editor)

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Carrier dynamics of epitaxial ZnO thin film was investigated using a frequency up-conversion tehcnique. At lower carrier densities, the decay time of free exciton recombination was measured to be 24 ps. Rapid decay times of a few picoseconds were observed at higher carrier densities, which show a transition of two dynamic processes. The comparison of calculated gain spectrum and experimental data gave evidence that the transition is form exciton-exciton scattering to the recombination of electron hole plasma.
Original languageEnglish
Title of host publicationProceedings of the 24th International Conference on The Physics of Semiconductors
Place of PublicationSingapore
PublisherWorld Scientific
Publication date1999
Publication statusPublished - 1999
Event24th International Conference on The Physics of Semiconductors - Jerusalem, Israel
Duration: 2 Aug 19987 Aug 1998
Conference number: 24


Conference24th International Conference on The Physics of Semiconductors
Internet address

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