Carrier diffusion and higher order transversal modes in spectral dynamics of the semiconductor laser

Jens Buus; Magnus Danielsen

doi:10.1109/JQE.1977.1069412

Carrier diffusion and higher order transversal modes in spectral dynamics of the semiconductor laser

Jens Buus, Magnus Danielsen

Technical University of Denmark

Research output: Contribution to journal › Journal article › Research › peer-review

427 Downloads (Pure)

Abstract

The dynamic and spectral behavior of the semiconductor stripe laser has been investigated. For this purpose the rate equations have been generalized to include several longitudinal and transversal modes, spontaneous emission into the active modes, and position dependence of the electron density through a term describing the charge-carrier diffusion in the plane of the active layer. The parameters used for solving these equations are found by theoretical and experimental considerations. The results show a broadening of the spectrum together with a significant content of higher order transversal modes along the junction plane.

Original language	English
Journal	I E E E Journal of Quantum Electronics
Volume	13
Issue number	8
Pages (from-to)	669-674
ISSN	0018-9197
DOIs	https://doi.org/10.1109/JQE.1977.1069412
Publication status	Published - 1977

Bibliographical note

Copyright: 1977 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

Access to Document

10.1109/JQE.1977.1069412

BuusFinal published version, 1.66 MB

OpenUrl availability

Full text

Cite this

@article{4aa90ee7ccfe48cbb42acf7ce83bfe99,

title = "Carrier diffusion and higher order transversal modes in spectral dynamics of the semiconductor laser",

abstract = "The dynamic and spectral behavior of the semiconductor stripe laser has been investigated. For this purpose the rate equations have been generalized to include several longitudinal and transversal modes, spontaneous emission into the active modes, and position dependence of the electron density through a term describing the charge-carrier diffusion in the plane of the active layer. The parameters used for solving these equations are found by theoretical and experimental considerations. The results show a broadening of the spectrum together with a significant content of higher order transversal modes along the junction plane.",

author = "Jens Buus and Magnus Danielsen",

note = "Copyright: 1977 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE",

year = "1977",

doi = "10.1109/JQE.1977.1069412",

language = "English",

volume = "13",

pages = "669--674",

journal = "I E E E Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers",

number = "8",

}

TY - JOUR

T1 - Carrier diffusion and higher order transversal modes in spectral dynamics of the semiconductor laser

AU - Buus, Jens

AU - Danielsen, Magnus

N1 - Copyright: 1977 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 1977

Y1 - 1977

N2 - The dynamic and spectral behavior of the semiconductor stripe laser has been investigated. For this purpose the rate equations have been generalized to include several longitudinal and transversal modes, spontaneous emission into the active modes, and position dependence of the electron density through a term describing the charge-carrier diffusion in the plane of the active layer. The parameters used for solving these equations are found by theoretical and experimental considerations. The results show a broadening of the spectrum together with a significant content of higher order transversal modes along the junction plane.

AB - The dynamic and spectral behavior of the semiconductor stripe laser has been investigated. For this purpose the rate equations have been generalized to include several longitudinal and transversal modes, spontaneous emission into the active modes, and position dependence of the electron density through a term describing the charge-carrier diffusion in the plane of the active layer. The parameters used for solving these equations are found by theoretical and experimental considerations. The results show a broadening of the spectrum together with a significant content of higher order transversal modes along the junction plane.

U2 - 10.1109/JQE.1977.1069412

DO - 10.1109/JQE.1977.1069412

M3 - Journal article

SN - 0018-9197

VL - 13

SP - 669

EP - 674

JO - I E E E Journal of Quantum Electronics

JF - I E E E Journal of Quantum Electronics

IS - 8

ER -

Carrier diffusion and higher order transversal modes in spectral dynamics of the semiconductor laser

Abstract

Bibliographical note

Access to Document

OpenUrl availability

Fingerprint

Cite this