Carrier diffusion and higher order transversal modes in spectral dynamics of the semiconductor laser

Jens Buus, Magnus Danielsen

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Abstract

The dynamic and spectral behavior of the semiconductor stripe laser has been investigated. For this purpose the rate equations have been generalized to include several longitudinal and transversal modes, spontaneous emission into the active modes, and position dependence of the electron density through a term describing the charge-carrier diffusion in the plane of the active layer. The parameters used for solving these equations are found by theoretical and experimental considerations. The results show a broadening of the spectrum together with a significant content of higher order transversal modes along the junction plane.
Original languageEnglish
JournalI E E E Journal of Quantum Electronics
Volume13
Issue number8
Pages (from-to)669-674
ISSN0018-9197
DOIs
Publication statusPublished - 1977

Bibliographical note

Copyright: 1977 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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