Carrier-carrier scattering in the gain dynamics of InxGa1-xAs/AlyGa1-yAs diode lasers

Gary D Sanders, C.-K. Sun, B. Golubovic, J. G. Fujimoto, Christopher J Stanton

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    Abstract

    Ultrafast optical nonlinearities in semiconductors play a central role in determining transient amplification and pulse-dependent gain saturation in diode lasers. Both carrier-phonon and carrier-carrier scattering are expected to determine the gain dynamics in these systems. We present a relaxation-time approximation model for carrier-carrier scattering in strained-layer lasers. The carrier-carrier scattering rates are determined using the quasiequilibrium distribution functions for a given background carrier density. The distribution function to which the photoexcited distribution relaxes is a Fermi-Dirac function where the chemical potential and temperature are self-consistently chosen so that both particle number and energy are conserved in the carrier-carrier scattering process. The relaxation approximation makes the problem an effective one-dimensional problem which can then be solved directly for the carrier distributions using an adaptive Runge-Kutta routine. This procedure is less computationally intensive than a full Monte Carlo simulation. The results show that the inclusion of carrier-carrier scattering improves previous results where only carrier-phonon scattering was included and that carrier-carrier scattering is necessary to produce heating of the carriers in the high-energy tails.
    Original languageEnglish
    JournalPhysical Review B
    Volume54
    Issue number11
    Pages (from-to)8005-8020
    ISSN2469-9950
    DOIs
    Publication statusPublished - 1996

    Bibliographical note

    Copyright (1996) American Physical Society.

    Keywords

    • INGAASP OPTICAL AMPLIFIERS
    • ELECTRON-ELECTRON SCATTERING
    • SATURATION
    • COMPRESSION

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