Carbon mediated reduction of silicon dioxide and growth of copper silicide particles in uniform width channels

Filippo Pizzocchero, Peter Bøggild, Tim Booth

    Research output: Contribution to journalJournal articleResearchpeer-review

    493 Downloads (Pure)

    Abstract

    We show that surface arc-discharge deposited carbon plays a critical intermediary role in the breakdown of thermally grown oxide diffusion barriers of 90 nm on a silicon wafer at 1035°C in an Ar/H2 atmosphere, resulting in the formation of epitaxial copper silicide particles in ≈ 10 μm wide channels, which are aligned with the intersections of the (100) surface of the wafer and the {110} planes on an oxidized silicon wafer, as well as endotaxial copper silicide nanoparticles within the wafer bulk. We apply energy dispersive x-ray spectroscopy, in combination with scanning and transmission electron microscopy of focused ion beam fabricated lammelas and trenches in the structure to elucidate the process of their formation.
    Original languageEnglish
    JournalJournal of Applied Physics
    Volume114
    Issue number11
    Pages (from-to)114303
    ISSN0021-8979
    Publication statusPublished - 2013

    Bibliographical note

    © 2013 AIP Publishing LLC

    Fingerprint Dive into the research topics of 'Carbon mediated reduction of silicon dioxide and growth of copper silicide particles in uniform width channels'. Together they form a unique fingerprint.

    Cite this