Capture and release of carriers in InGaAs/GaAs quantum dots.

Dmitry Turchinovich, Henrik Porte, N. Daghestani, K.G. Wilcox, E.U. Rafailov, Peter Uhd Jepsen

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

We observe the ultrafast capture and release of charge carriers in InGaAs/GaAs quantum dots (QDs) at room-temperature with time-resolved terahertz spectroscopy. For excitation into the barrier states, a decay of the photoinduced conductivity, due to capture of carriers into the nonconducting QD states is observed. The increase of the decay time constant with increasing pump fluence is attributed to filling of the QD states. In the case of resonantly excitation into the QD ground state a maximum conductivity is reached 35 ps after photoexcitation, which is assigned to the release of carriers from the QDs into the wetting layer and barrier states.
Original languageEnglish
Book seriesJournal of Physics: Conference Series (Online)
Volume193
Pages (from-to)1
ISSN1742-6596
DOIs
Publication statusPublished - 2009
Event16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures - Montpellier, France
Duration: 24 Aug 200928 Aug 2009
Conference number: 16
http://thznetwork.net/index.php/archives/678

Conference

Conference16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures
Number16
CountryFrance
CityMontpellier
Period24/08/200928/08/2009
Internet address

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