Capture and release of carriers in InGaAs/GaAs quantum dots.

Dmitry Turchinovich, Henrik Porte, N. Daghestani, K.G. Wilcox, E.U. Rafailov, Peter Uhd Jepsen

    Research output: Contribution to journalConference articleResearchpeer-review

    Abstract

    We observe the ultrafast capture and release of charge carriers in InGaAs/GaAs quantum dots (QDs) at room-temperature with time-resolved terahertz spectroscopy. For excitation into the barrier states, a decay of the photoinduced conductivity, due to capture of carriers into the nonconducting QD states is observed. The increase of the decay time constant with increasing pump fluence is attributed to filling of the QD states. In the case of resonantly excitation into the QD ground state a maximum conductivity is reached 35 ps after photoexcitation, which is assigned to the release of carriers from the QDs into the wetting layer and barrier states.
    Original languageEnglish
    Book seriesJournal of Physics: Conference Series (Online)
    Volume193
    Pages (from-to)1
    ISSN1742-6596
    DOIs
    Publication statusPublished - 2009
    Event16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures - Montpellier, France
    Duration: 24 Aug 200928 Aug 2009
    Conference number: 16
    http://thznetwork.net/index.php/archives/678

    Conference

    Conference16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructures
    Number16
    Country/TerritoryFrance
    CityMontpellier
    Period24/08/200928/08/2009
    Internet address

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