Capacitive Substrate Coupling of Row–Column-Addressed 2-D CMUT Arrays

Mathias Engholm; Hamed Bouzari; Jørgen Arendt Jensen; Erik Vilain Thomsen

doi:10.1109/ULTSYM.2016.7728384

Capacitive Substrate Coupling of Row–Column-Addressed 2-D CMUT Arrays

Mathias Engholm
, Hamed Bouzari
, Jørgen Arendt Jensen
, Erik Vilain Thomsen

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

Row–column-addressed CMUT arrays suffer from low receive sensitivity of the bottom elements due to a capacitive coupling to the substrate. The capacitive coupling increases the parasitic capacitance. A simple approach to reduce the parasitic capacitance is presented, which is based on depleting the semiconductor substrate. To reduce the parasitic capacitance by 80% the bulk doping concentration should be at most 10¹² cm^-3. Experimental results show that the parasitic capacitance can be reduced by 87% by applying a substrate potential of 6V relative to the bottom electrodes. The depletion of the semiconductor substrate can be sustained for at least 10 minutes making it applicable for row–column-addressed CMUT arrays for ultrasonic imaging. Theoretically the reduced parasitic capacitance indicates that the receive sensitivity of the bottom elements can be increased by a factor of 2:1.

Original language	English
Title of host publication	Proceedings of 2016 IEEE International Ultrasonics Symposium
Number of pages	4
Publisher	IEEE
Publication date	2016
ISBN (Print)	978-1-4673-9898-5
ISBN (Electronic)	978-1-4673-9897-8
DOIs	https://doi.org/10.1109/ULTSYM.2016.7728384
Publication status	Published - 2016
Event	2016 IEEE International Ultrasonics Symposium - Convention Center Vinci Tours, Tours, France Duration: 18 Sept 2016 → 21 Sept 2016 https://ieeexplore.ieee.org/xpl/conhome/7589760/proceeding

Conference

Conference	2016 IEEE International Ultrasonics Symposium
Location	Convention Center Vinci Tours
Country/Territory	France
City	Tours
Period	18/09/2016 → 21/09/2016
Internet address	https://ieeexplore.ieee.org/xpl/conhome/7589760/proceeding

Keywords

Substrates
Electrodes
Parasitic capacitance
Couplings
Doping
Capacitance measurement

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10.1109/ULTSYM.2016.7728384

Engholm et al IUS2016Accepted author manuscript, 3.01 MB

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title = "Capacitive Substrate Coupling of Row–Column-Addressed 2-D CMUT Arrays",

abstract = "Row–column-addressed CMUT arrays suffer from low receive sensitivity of the bottom elements due to a capacitive coupling to the substrate. The capacitive coupling increases the parasitic capacitance. A simple approach to reduce the parasitic capacitance is presented, which is based on depleting the semiconductor substrate. To reduce the parasitic capacitance by 80\% the bulk doping concentration should be at most 1012 cm-3. Experimental results show that the parasitic capacitance can be reduced by 87\% by applying a substrate potential of 6V relative to the bottom electrodes. The depletion of the semiconductor substrate can be sustained for at least 10 minutes making it applicable for row–column-addressed CMUT arrays for ultrasonic imaging. Theoretically the reduced parasitic capacitance indicates that the receive sensitivity of the bottom elements can be increased by a factor of 2:1.",

keywords = "Substrates, Electrodes, Parasitic capacitance, Couplings, Doping, Capacitance measurement",

author = "Mathias Engholm and Hamed Bouzari and Jensen, \{J{\o}rgen Arendt\} and Thomsen, \{Erik Vilain\}",

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publisher = "IEEE",

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AU - Jensen, Jørgen Arendt

AU - Thomsen, Erik Vilain

PY - 2016

Y1 - 2016

N2 - Row–column-addressed CMUT arrays suffer from low receive sensitivity of the bottom elements due to a capacitive coupling to the substrate. The capacitive coupling increases the parasitic capacitance. A simple approach to reduce the parasitic capacitance is presented, which is based on depleting the semiconductor substrate. To reduce the parasitic capacitance by 80% the bulk doping concentration should be at most 1012 cm-3. Experimental results show that the parasitic capacitance can be reduced by 87% by applying a substrate potential of 6V relative to the bottom electrodes. The depletion of the semiconductor substrate can be sustained for at least 10 minutes making it applicable for row–column-addressed CMUT arrays for ultrasonic imaging. Theoretically the reduced parasitic capacitance indicates that the receive sensitivity of the bottom elements can be increased by a factor of 2:1.

AB - Row–column-addressed CMUT arrays suffer from low receive sensitivity of the bottom elements due to a capacitive coupling to the substrate. The capacitive coupling increases the parasitic capacitance. A simple approach to reduce the parasitic capacitance is presented, which is based on depleting the semiconductor substrate. To reduce the parasitic capacitance by 80% the bulk doping concentration should be at most 1012 cm-3. Experimental results show that the parasitic capacitance can be reduced by 87% by applying a substrate potential of 6V relative to the bottom electrodes. The depletion of the semiconductor substrate can be sustained for at least 10 minutes making it applicable for row–column-addressed CMUT arrays for ultrasonic imaging. Theoretically the reduced parasitic capacitance indicates that the receive sensitivity of the bottom elements can be increased by a factor of 2:1.

KW - Substrates

KW - Electrodes

KW - Parasitic capacitance

KW - Couplings

KW - Doping

KW - Capacitance measurement

U2 - 10.1109/ULTSYM.2016.7728384

DO - 10.1109/ULTSYM.2016.7728384

M3 - Article in proceedings

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BT - Proceedings of 2016 IEEE International Ultrasonics Symposium

PB - IEEE

T2 - 2016 IEEE International Ultrasonics Symposium

Y2 - 18 September 2016 through 21 September 2016

ER -

Capacitive Substrate Coupling of Row–Column-Addressed 2-D CMUT Arrays

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Keywords

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