Butt-joint integration of active optical components based on InP/AlInGaAsP alloys

Irina Kulkova; Nadezda Kuznetsova; Elizaveta Semenova; Kresten Yvind

doi:10.1109/ICIPRM.2014.6880579

Butt-joint integration of active optical components based on InP/AlInGaAsP alloys

Irina Kulkova
, Nadezda Kuznetsova
, Elizaveta Semenova
, Kresten Yvind

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

We demonstrate all-active planar high quality butt-joint (BJ) integration of a QW Semiconductor Optical Amplifier (SOA) and MQW Electro-Absorption Modulator (EAM) based on an InP/AlInGaAsP platform. The degradation of the optical properties in the vicinity of ~1 μm to the BJ interface was determined by means of μPL measurements.

Original language	English
Title of host publication	Proceedings of the 26th International Conference on Indium Phosphide and Related Materials
Publisher	IEEE
Publication date	2014
Pages	1-2
ISBN (Print)	9781479957293
DOIs	https://doi.org/10.1109/ICIPRM.2014.6880579
Publication status	Published - 2014
Event	26th International Conference on Indium Phosphide and Related Materials - Montpellier, France Duration: 11 May 2014 → 15 May 2014

Conference

Conference	26th International Conference on Indium Phosphide and Related Materials
Country/Territory	France
City	Montpellier
Period	11/05/2014 → 15/05/2014

Keywords

electro-optical modulation
electroabsorption
III-V semiconductors
indium compounds
integrated optics
photoluminescence
quantum well lasers
semiconductor optical amplifiers
Components, Circuits, Devices and Systems
Photonics and Electrooptics
active optical components
Al(role int)
Al(role ss)
AlInGaAsP(role int)
AlInGaAsP(role ss)
all-active planar high quality butt-joint integration
As(role int)
As(role ss)
BJ interface
EAM
Ga(role int)
Ga(role ss)
In(role bin)
In(role int)
In(role ss)
Indium gallium arsenide
Indium phosphide
InP(role bin)
InP(role int)
InP-AlInGaAsP
InP-AlInGaAsP(role int)
InP/AlInGaAsP alloys
Laser mode locking
MQW Electro-Absorption Modulator
optical properties
Optical reflection
P(role bin)
P(role int)
P(role ss)
Quantum well devices
QW Semiconductor Optical Amplifier
Semiconductor optical amplifiers
SOA
μPL measurements

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10.1109/ICIPRM.2014.6880579

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@inproceedings{4d8d9a040e264f2fb763de95696f23ee,

title = "Butt-joint integration of active optical components based on InP/AlInGaAsP alloys",

abstract = "We demonstrate all-active planar high quality butt-joint (BJ) integration of a QW Semiconductor Optical Amplifier (SOA) and MQW Electro-Absorption Modulator (EAM) based on an InP/AlInGaAsP platform. The degradation of the optical properties in the vicinity of \textasciitilde{}1 μm to the BJ interface was determined by means of μPL measurements.",

keywords = "electro-optical modulation, electroabsorption, III-V semiconductors, indium compounds, integrated optics, photoluminescence, quantum well lasers, semiconductor optical amplifiers, Components, Circuits, Devices and Systems, Photonics and Electrooptics, active optical components, Al(role int), Al(role ss), AlInGaAsP(role int), AlInGaAsP(role ss), all-active planar high quality butt-joint integration, As(role int), As(role ss), BJ interface, EAM, Ga(role int), Ga(role ss), In(role bin), In(role int), In(role ss), Indium gallium arsenide, Indium phosphide, InP(role bin), InP(role int), InP-AlInGaAsP, InP-AlInGaAsP(role int), InP/AlInGaAsP alloys, Laser mode locking, MQW Electro-Absorption Modulator, optical properties, Optical reflection, P(role bin), P(role int), P(role ss), Quantum well devices, QW Semiconductor Optical Amplifier, Semiconductor optical amplifiers, SOA, μPL measurements",

author = "Irina Kulkova and Nadezda Kuznetsova and Elizaveta Semenova and Kresten Yvind",

year = "2014",

doi = "10.1109/ICIPRM.2014.6880579",

language = "English",

isbn = "9781479957293",

pages = "1--2",

booktitle = "Proceedings of the 26th International Conference on Indium Phosphide and Related Materials",

publisher = "IEEE",

address = "United States",

note = "26th International Conference on Indium Phosphide and Related Materials ; Conference date: 11-05-2014 Through 15-05-2014",

}

Kulkova, I, Kuznetsova, N, Semenova, E & Yvind, K 2014, Butt-joint integration of active optical components based on InP/AlInGaAsP alloys. in Proceedings of the 26th International Conference on Indium Phosphide and Related Materials. IEEE, pp. 1-2, 26th International Conference on Indium Phosphide and Related Materials, Montpellier, France, 11/05/2014. https://doi.org/10.1109/ICIPRM.2014.6880579

Butt-joint integration of active optical components based on InP/AlInGaAsP alloys. / Kulkova, Irina; Kuznetsova, Nadezda; Semenova, Elizaveta et al.
Proceedings of the 26th International Conference on Indium Phosphide and Related Materials. IEEE, 2014. p. 1-2.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Butt-joint integration of active optical components based on InP/AlInGaAsP alloys

AU - Kulkova, Irina

AU - Kuznetsova, Nadezda

AU - Semenova, Elizaveta

AU - Yvind, Kresten

PY - 2014

Y1 - 2014

N2 - We demonstrate all-active planar high quality butt-joint (BJ) integration of a QW Semiconductor Optical Amplifier (SOA) and MQW Electro-Absorption Modulator (EAM) based on an InP/AlInGaAsP platform. The degradation of the optical properties in the vicinity of ~1 μm to the BJ interface was determined by means of μPL measurements.

AB - We demonstrate all-active planar high quality butt-joint (BJ) integration of a QW Semiconductor Optical Amplifier (SOA) and MQW Electro-Absorption Modulator (EAM) based on an InP/AlInGaAsP platform. The degradation of the optical properties in the vicinity of ~1 μm to the BJ interface was determined by means of μPL measurements.

KW - electro-optical modulation

KW - electroabsorption

KW - III-V semiconductors

KW - indium compounds

KW - integrated optics

KW - photoluminescence

KW - quantum well lasers

KW - semiconductor optical amplifiers

KW - Components, Circuits, Devices and Systems

KW - Photonics and Electrooptics

KW - active optical components

KW - Al(role int)

KW - Al(role ss)

KW - AlInGaAsP(role int)

KW - AlInGaAsP(role ss)

KW - all-active planar high quality butt-joint integration

KW - As(role int)

KW - As(role ss)

KW - BJ interface

KW - EAM

KW - Ga(role int)

KW - Ga(role ss)

KW - In(role bin)

KW - In(role int)

KW - In(role ss)

KW - Indium gallium arsenide

KW - Indium phosphide

KW - InP(role bin)

KW - InP(role int)

KW - InP-AlInGaAsP

KW - InP-AlInGaAsP(role int)

KW - InP/AlInGaAsP alloys

KW - Laser mode locking

KW - MQW Electro-Absorption Modulator

KW - optical properties

KW - Optical reflection

KW - P(role bin)

KW - P(role int)

KW - P(role ss)

KW - Quantum well devices

KW - QW Semiconductor Optical Amplifier

KW - Semiconductor optical amplifiers

KW - SOA

KW - μPL measurements

U2 - 10.1109/ICIPRM.2014.6880579

DO - 10.1109/ICIPRM.2014.6880579

M3 - Article in proceedings

SN - 9781479957293

SP - 1

EP - 2

BT - Proceedings of the 26th International Conference on Indium Phosphide and Related Materials

PB - IEEE

T2 - 26th International Conference on Indium Phosphide and Related Materials

Y2 - 11 May 2014 through 15 May 2014

ER -

Butt-joint integration of active optical components based on InP/AlInGaAsP alloys

Abstract

Conference

Keywords

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