Abstract
We demonstrate all-active planar high quality butt-joint (BJ) integration of a QW Semiconductor Optical Amplifier (SOA) and MQW Electro-Absorption Modulator (EAM) based on an InP/AlInGaAsP platform. The degradation of the optical properties in the vicinity of ~1 μm to the BJ interface was determined by means of μPL measurements.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 26th International Conference on Indium Phosphide and Related Materials |
| Publisher | IEEE |
| Publication date | 2014 |
| Pages | 1-2 |
| ISBN (Print) | 9781479957293 |
| DOIs | |
| Publication status | Published - 2014 |
| Event | 26th International Conference on Indium Phosphide and Related Materials - Montpellier, France Duration: 11 May 2014 → 15 May 2014 |
Conference
| Conference | 26th International Conference on Indium Phosphide and Related Materials |
|---|---|
| Country/Territory | France |
| City | Montpellier |
| Period | 11/05/2014 → 15/05/2014 |
Keywords
- electro-optical modulation
- electroabsorption
- III-V semiconductors
- indium compounds
- integrated optics
- photoluminescence
- quantum well lasers
- semiconductor optical amplifiers
- Components, Circuits, Devices and Systems
- Photonics and Electrooptics
- active optical components
- Al(role int)
- Al(role ss)
- AlInGaAsP(role int)
- AlInGaAsP(role ss)
- all-active planar high quality butt-joint integration
- As(role int)
- As(role ss)
- BJ interface
- EAM
- Ga(role int)
- Ga(role ss)
- In(role bin)
- In(role int)
- In(role ss)
- Indium gallium arsenide
- Indium phosphide
- InP(role bin)
- InP(role int)
- InP-AlInGaAsP
- InP-AlInGaAsP(role int)
- InP/AlInGaAsP alloys
- Laser mode locking
- MQW Electro-Absorption Modulator
- optical properties
- Optical reflection
- P(role bin)
- P(role int)
- P(role ss)
- Quantum well devices
- QW Semiconductor Optical Amplifier
- Semiconductor optical amplifiers
- SOA
- μPL measurements