Buffer layer-induced unusual rectifying behavior in La0.67Ca0.33MnO3/LaMnO3/SrTiO3:Nb junctions

W. M. Lu, J. R. Sun, Yunzhong Chen, B. G. Shen

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Rectifying behavior has been studied for the La0.67Ca0.33MnO3/LaMnO3/SrTiO: Nb junctions with a LaMnO3 layer between 0 and 12 nm. Different from the single-process behavior in the junction with a thin intermediate layer, the junction buffered by the LaMnO3 layer of 6 or 8 nm shows two distinctive processes with the character of thermionic emission. Based on the analyses of current-voltage characteristics, a spikelike and notchlike band structures in the two sides of the junctions are derived, with respectively, the interfacial barriers of ∼0.75 and ∼0.57 eV. The complex band structure is believed to be responsible for the two-process feature observed.
Original languageEnglish
Article number152514
JournalApplied Physics Letters
Issue number15
Number of pages3
Publication statusPublished - 2009
Externally publishedYes

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