Buffer layer-enhanced magnetic field effect in manganite-based heterojunctions

W. M. Lu, J. R. Sun, Yunzhong Chen, D. S. Shang, B. G. Shen

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Abstract

Influence of magnetic field on the rectifying property of the La0.67Ca0.33MnO3/LaMnO3/SrTiO: 0.05 wt  %Nb heterojunctions has been studied. In addition to an enhanced magnetic response of the current-voltage characteristics, a field-induced increase in junction resistance, which is an effect different from that in the junctions without the LaMnO3 layer, is observed. The positive magnetoresistance is further found to show a systematic variation with the thickness of the LaMnO3 layer (t) , growing rapidly with the increase of layer thickness and getting a maximum of ∼91% at t=4 nm ( T=50 K and ΔH=5 T ). Analysis of the current-voltage and capacitance-voltage characteristics indicates a field-induced growth of interfacial barrier, which is responsible for the abnormal effect observed here.
Original languageEnglish
Article number232514
JournalApplied Physics Letters
Volume95
Issue number23
Number of pages3
ISSN0003-6951
DOIs
Publication statusPublished - 2009
Externally publishedYes

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