Buffer layer-enhanced magnetic field effect in manganite-based heterojunctions

W. M.  Lu; J. R. Sun; Yunzhong Chen; D. S. Shang; B. G. Shen

doi:10.1063/1.3273375

Buffer layer-enhanced magnetic field effect in manganite-based heterojunctions

W. M. Lu, J. R. Sun, Yunzhong Chen, D. S. Shang, B. G. Shen

Chinese Academy of Sciences

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Abstract

Influence of magnetic field on the rectifying property of the La_0.67Ca_0.33MnO₃/LaMnO₃/SrTiO₃: 0.05 wt %Nb heterojunctions has been studied. In addition to an enhanced magnetic response of the current-voltage characteristics, a field-induced increase in junction resistance, which is an effect different from that in the junctions without the LaMnO₃ layer, is observed. The positive magnetoresistance is further found to show a systematic variation with the thickness of the LaMnO₃ layer (t) , growing rapidly with the increase of layer thickness and getting a maximum of ∼91% at t=4 nm ( T=50 K and ΔH=5 T ). Analysis of the current-voltage and capacitance-voltage characteristics indicates a field-induced growth of interfacial barrier, which is responsible for the abnormal effect observed here.

Original language	English
Article number	232514
Journal	Applied Physics Letters
Volume	95
Issue number	23
Number of pages	3
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.3273375
Publication status	Published - 2009
Externally published	Yes

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title = "Buffer layer-enhanced magnetic field effect in manganite-based heterojunctions",

abstract = "Influence of magnetic field on the rectifying property of the La0.67Ca0.33MnO3/LaMnO3/SrTiO3 : 0.05 wt %Nb heterojunctions has been studied. In addition to an enhanced magnetic response of the current-voltage characteristics, a field-induced increase in junction resistance, which is an effect different from that in the junctions without the LaMnO3 layer, is observed. The positive magnetoresistance is further found to show a systematic variation with the thickness of the LaMnO3 layer (t) , growing rapidly with the increase of layer thickness and getting a maximum of ∼91% at t=4 nm ( T=50 K and ΔH=5 T ). Analysis of the current-voltage and capacitance-voltage characteristics indicates a field-induced growth of interfacial barrier, which is responsible for the abnormal effect observed here.",

author = "Lu, {W. M.} and Sun, {J. R.} and Yunzhong Chen and Shang, {D. S.} and Shen, {B. G.}",

year = "2009",

doi = "10.1063/1.3273375",

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journal = "Applied Physics Letters",

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T1 - Buffer layer-enhanced magnetic field effect in manganite-based heterojunctions

AU - Lu, W. M.

AU - Sun, J. R.

AU - Chen, Yunzhong

AU - Shang, D. S.

AU - Shen, B. G.

PY - 2009

Y1 - 2009

N2 - Influence of magnetic field on the rectifying property of the La0.67Ca0.33MnO3/LaMnO3/SrTiO3 : 0.05 wt %Nb heterojunctions has been studied. In addition to an enhanced magnetic response of the current-voltage characteristics, a field-induced increase in junction resistance, which is an effect different from that in the junctions without the LaMnO3 layer, is observed. The positive magnetoresistance is further found to show a systematic variation with the thickness of the LaMnO3 layer (t) , growing rapidly with the increase of layer thickness and getting a maximum of ∼91% at t=4 nm ( T=50 K and ΔH=5 T ). Analysis of the current-voltage and capacitance-voltage characteristics indicates a field-induced growth of interfacial barrier, which is responsible for the abnormal effect observed here.

AB - Influence of magnetic field on the rectifying property of the La0.67Ca0.33MnO3/LaMnO3/SrTiO3 : 0.05 wt %Nb heterojunctions has been studied. In addition to an enhanced magnetic response of the current-voltage characteristics, a field-induced increase in junction resistance, which is an effect different from that in the junctions without the LaMnO3 layer, is observed. The positive magnetoresistance is further found to show a systematic variation with the thickness of the LaMnO3 layer (t) , growing rapidly with the increase of layer thickness and getting a maximum of ∼91% at t=4 nm ( T=50 K and ΔH=5 T ). Analysis of the current-voltage and capacitance-voltage characteristics indicates a field-induced growth of interfacial barrier, which is responsible for the abnormal effect observed here.

U2 - 10.1063/1.3273375

DO - 10.1063/1.3273375

M3 - Journal article

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232514

ER -

Buffer layer-enhanced magnetic field effect in manganite-based heterojunctions

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