Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etching

Yiyu Ou; Imran Aijaz; Valdas Jokubavicius; Rositza Yakimova; Mikael Syväjärvi; Haiyan Ou

doi:10.1364/OME.3.000086

Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etching

Yiyu Ou, Imran Aijaz, Valdas Jokubavicius, Rositza Yakimova, Mikael Syväjärvi, Haiyan Ou

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Abstract

An approach of fabricating pseudoperiodic antireflective subwavelength structures on silicon carbide by using self-assembled Au nanopatterns as etching mask is demonstrated. The nanopatterning process is more time-efficiency than the e-beam lithography or nanoimprint lithography process. The influences of the reactive-ion etching conditions and deposited Au film thickness to the subwavelength structure profile and its corresponding surface reflectance have been systematically investigated. Under the optimal experimental conditions, the average reflectance of the silicon carbide in the range of 390x02013;784 nm is dramatically suppressed from 21.0x00025; to 1.9x00025; after introducing the pseudoperiodic nanostructures. A luminescence enhancement of 226x00025; was achieved at an emission angle of 20x000B0; on the fluorescent silicon carbide. Meanwhile, the angle-resolved photoluminescence study presents a considerable omnidirectional luminescence enhancement.

Original language	English
Journal	Optical Materials Express
Volume	3
Issue number	1
Pages (from-to)	86-94
ISSN	2159-3930
DOIs	https://doi.org/10.1364/OME.3.000086
Publication status	Published - 2013

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This paper was published in Optical Materials Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-3-1-86. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.

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@article{09818ef66dd544b9a6966064d8d0f92f,

title = "Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etching",

abstract = "An approach of fabricating pseudoperiodic antireflective subwavelength structures on silicon carbide by using self-assembled Au nanopatterns as etching mask is demonstrated. The nanopatterning process is more time-efficiency than the e-beam lithography or nanoimprint lithography process. The influences of the reactive-ion etching conditions and deposited Au film thickness to the subwavelength structure profile and its corresponding surface reflectance have been systematically investigated. Under the optimal experimental conditions, the average reflectance of the silicon carbide in the range of 390x02013;784 nm is dramatically suppressed from 21.0x00025; to 1.9x00025; after introducing the pseudoperiodic nanostructures. A luminescence enhancement of 226x00025; was achieved at an emission angle of 20x000B0; on the fluorescent silicon carbide. Meanwhile, the angle-resolved photoluminescence study presents a considerable omnidirectional luminescence enhancement.",

author = "Yiyu Ou and Imran Aijaz and Valdas Jokubavicius and Rositza Yakimova and Mikael Syv{\"a}j{\"a}rvi and Haiyan Ou",

note = "This paper was published in Optical Materials Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-3-1-86. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.",

year = "2013",

doi = "10.1364/OME.3.000086",

language = "English",

volume = "3",

pages = "86--94",

journal = "Optical Materials Express",

issn = "2159-3930",

publisher = "Optical Society of America",

number = "1",

}

TY - JOUR

T1 - Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etching

AU - Ou, Yiyu

AU - Aijaz, Imran

AU - Jokubavicius, Valdas

AU - Yakimova, Rositza

AU - Syväjärvi, Mikael

AU - Ou, Haiyan

N1 - This paper was published in Optical Materials Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-3-1-86. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.

PY - 2013

Y1 - 2013

N2 - An approach of fabricating pseudoperiodic antireflective subwavelength structures on silicon carbide by using self-assembled Au nanopatterns as etching mask is demonstrated. The nanopatterning process is more time-efficiency than the e-beam lithography or nanoimprint lithography process. The influences of the reactive-ion etching conditions and deposited Au film thickness to the subwavelength structure profile and its corresponding surface reflectance have been systematically investigated. Under the optimal experimental conditions, the average reflectance of the silicon carbide in the range of 390x02013;784 nm is dramatically suppressed from 21.0x00025; to 1.9x00025; after introducing the pseudoperiodic nanostructures. A luminescence enhancement of 226x00025; was achieved at an emission angle of 20x000B0; on the fluorescent silicon carbide. Meanwhile, the angle-resolved photoluminescence study presents a considerable omnidirectional luminescence enhancement.

AB - An approach of fabricating pseudoperiodic antireflective subwavelength structures on silicon carbide by using self-assembled Au nanopatterns as etching mask is demonstrated. The nanopatterning process is more time-efficiency than the e-beam lithography or nanoimprint lithography process. The influences of the reactive-ion etching conditions and deposited Au film thickness to the subwavelength structure profile and its corresponding surface reflectance have been systematically investigated. Under the optimal experimental conditions, the average reflectance of the silicon carbide in the range of 390x02013;784 nm is dramatically suppressed from 21.0x00025; to 1.9x00025; after introducing the pseudoperiodic nanostructures. A luminescence enhancement of 226x00025; was achieved at an emission angle of 20x000B0; on the fluorescent silicon carbide. Meanwhile, the angle-resolved photoluminescence study presents a considerable omnidirectional luminescence enhancement.

U2 - 10.1364/OME.3.000086

DO - 10.1364/OME.3.000086

M3 - Journal article

SN - 2159-3930

VL - 3

SP - 86

EP - 94

JO - Optical Materials Express

JF - Optical Materials Express

IS - 1

ER -

Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etching

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