Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated on Si

Pawel Holewa, Aurimas Sakanas, Ugur M. Gur, Pawel Mrowinski, Alexander Huck, Bi Ying Wang, Anna Musial, Kresten Yvind, Niels Gregersen, Marcin Syperek, Elizaveta Semenova*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emit photons in the telecom bands (1460-1625 nm) and allow for heterogeneous integration with Si. In this work, we report on a novel, robust, and industry-compatible approach for achieving single-photon emission from InAs/InP QDs heterogeneously integrated with a Si substrate. As a proof of concept, we demonstrate a simple vertical emitting device, employing a metallic mirror beneath the QD emitter, and experimentally obtained photon extraction efficiencies of 10%. Nevertheless, the figures of merit of our structures are comparable with values previously only achieved for QDs emitting at shorter wavelength or by applying technically demanding fabrication processes. Our architecture and the simple fabrication procedure allows for the demonstration of high-purity single-photon generation with a second-order correlation function at zero time delay, g(2)(τ = 0) < 0.02, without any corrections at continuous wave excitation at the liquid helium temperature and preserved up to 50 K. For pulsed excitation, we achieve the as-measured g(2)(0) down to 0.205 ± 0.020 (0.114 ± 0.020 with background coincidences subtracted).

Original languageEnglish
JournalACS Photonics
Issue number7
Pages (from-to)2273–2279
Publication statusPublished - 2022


  • heterogeneous integration
  • InAs/InP
  • Photon extraction efficiency
  • Semiconductor quantum dots
  • Single-photon sources
  • Telecom spectral range


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