Bounds and Code Constructions for Partially Defect Memory Cells

Haider Al Kim, Sven Puchinger, Antonia Wachter-Zeh

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

This paper considers coding for so-called partially stuck memory cells. Such memory cells can only store partial information as some of their levels cannot be used due to, e.g., wear out. First, we present a new code construction for masking such partially stuck cells while additionally correcting errors. This construction (for cells with q > 2 levels) is achieved by generalizing an existing masking-only construction in [1] (based on binary codes) to correct errors as well. Compared to previous constructions in [2], our new construction achieves larger rates for many sets of parameters. Second, we derive a sphere-packing (any number of u partially stuck cells) and a Gilbert-Varshamov bound (u < q partially stuck cells) for codes that can mask a certain number of partially stuck cells and correct errors additionally. A numerical comparison between the new bounds and our previous construction of PSMCs for the case u < q in [2] shows that our construction lies above the Gilbert-Varshamov-like bound for several code parameters.

Original languageEnglish
Title of host publicationProceedings of the 17th International Workshop on Algebraic and Combinatorial Coding Theory
PublisherIEEE
Publication date11 Oct 2020
Pages6-12
Article number9383410
ISBN (Electronic)9781665402873
DOIs
Publication statusPublished - 11 Oct 2020
Event17th International Workshop on Algebraic and Combinatorial Coding Theory - Vitual, Albena, Bulgaria
Duration: 11 Oct 202017 Oct 2020
Conference number: 17

Conference

Conference17th International Workshop on Algebraic and Combinatorial Coding Theory
Number17
CountryBulgaria
CityVitual, Albena
Period11/10/202017/10/2020
SeriesProceedings of the 17th International Workshop on Algebraic and Combinatorial Coding Theory, ACCT 2020

Bibliographical note

Funding Information:
This work has received funding from the German Research Foundation (Deutsche Forschungsgemeinschaft, DFG) under Grant No. WA3907/1-1. H. Al Kim has received funding from the German Academic Exchange Service (Deutscher Akademischer Austauschdienst, DAAD) under the support program ID 57381412. S. Puchinger received funding from the European Union’s Horizon 2020 research and innovation program under the Marie Sklodowska-Curie grant agreement no. 713683. 978-1-6654-0287-3/20/$31.00 ©2020 IEEE

Publisher Copyright:
© 2020 IEEE.

Keywords

  • (Partially) stuck cells
  • Defect memory
  • Defective cells error correction
  • Flash memories
  • Gilbert-Varshamov bound
  • Phase change memories
  • Sphere packing bound

Fingerprint Dive into the research topics of 'Bounds and Code Constructions for Partially Defect Memory Cells'. Together they form a unique fingerprint.

Cite this