The luminescence of interwell excitons in double quantum wells GaAs/AlGaAs (n–i–n heterostructures) with large-scale fluctuations of random potential in the heteroboundary planes was studied. The properties of excitons whose photoexcited electron and hole are spatially separated in the neighboring quantum wells were studied as functions of density and temperature within the domains on the scale less than one micron. For this purpose, the surfaces of the samples were coated with a metallic mask containing specially prepared holes (windows) of a micron size an less for the photoexcitation and observation of luminescence. For weak pumping (less than 50 µW), the interwell excitons are strongly localized because of small-scale fluctuations of a random potential, and the corresponding photoluminescence line is inhomogeneously broadened (up to 2.5 meV). As the resonant excitation power increases, the line due to the delocalized excitons arises in a thresholdlike manner, after which its intensity linearly increases with increasing pump power, narrows (the smallest width is 350 µeV), and undergoes a shift (of about 0.5 µeV) to lower energies, in accordance with the filling of the lowest state in the domain. With a rise in temperature, this line disappears from the spectrum (Tc 3.4 K). The observed phenomenon is attributed to Bose–Einstein condensation in a quasi-two-dimensional system of interwell excitons. In the temperature range studied (1.5–3.4 K), the critical exciton density and temperature increase almost linearly with temperature.
|Publication status||Published - 2002|