Boron Concentration Measurements at the I/P Interface in Nip a-Si Solar Cells

Van Aken; Martial Duchamp; Chris Boothroyd; Rafal E. Dunin-Borkowski; J.-P. Barnes; M. Veillerot; W. J. Soppe; H. Ossenbrink; A. Jager-Waldau; P. Helm

doi:10.4229/26thEUPVSEC2011-3AV.2.11

Boron Concentration Measurements at the I/P Interface in Nip a-Si Solar Cells

Van Aken
, Martial Duchamp
, Chris Boothroyd
, Rafal E. Dunin-Borkowski
, J.-P. Barnes
, M. Veillerot
, W. J. Soppe
, H. Ossenbrink
, A. Jager-Waldau
, P. Helm

Energy Research Centre of the Netherlands
French Alternative Energies and Atomic Energy Commission
European Commission
WIP Renewable Energies

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

The p-type Si layer in n-i-p a-Si and μc-Si solar cells on foil has several important requirements with respect to conductivity and optical transmission. We control the optical band gap and activation energy of p-a-SiC by varying the B2H6 and CH4 flows in the process chamber. Modelling shows that the optimum efficiency in n-i-p solar cells is obtained when the p-a-SiC band gap is just above the band gap of the absorber layer. We have assessed the potential of core-loss electron energy-loss spectroscopy (EELS) for detecting B and C and of low-loss EELS, in a spatially resolved manner, as probe of local variations in bulk plasmon energy. EELS in the transmission electron microscope (TEM) combines the necessary spatial resolution to investigate the boundary between p-a-SiC and i-a-Si with sufficient sensitivity to the boron content.

Original language	English
Title of host publication	EU PVSEC Proceedings
Publication date	2011
Pages	2637-2640
ISBN (Print)	3-936338-27-2
DOIs	https://doi.org/10.4229/26thEUPVSEC2011-3AV.2.11
Publication status	Published - 2011
Event	26th European Photovoltaic Solar Energy Conference and Exhibition - Congress Center Hamburg, Hamburg, Germany Duration: 5 Sept 2011 → 9 Sept 2011 http://www.photovoltaic-conference.com/previous-eupvsec/26th-eu-pvsec.html

Conference

Conference	26th European Photovoltaic Solar Energy Conference and Exhibition
Location	Congress Center Hamburg
Country/Territory	Germany
City	Hamburg
Period	05/09/2011 → 09/09/2011
Internet address	http://www.photovoltaic-conference.com/previous-eupvsec/26th-eu-pvsec.html

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10.4229/26thEUPVSEC2011-3AV.2.11

http://www.eupvsec-proceedings.com/proceedings?char=B&paper=12186

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@inproceedings{5621c439afaf41fd8635662be8fc3fa8,

title = "Boron Concentration Measurements at the I/P Interface in Nip a-Si Solar Cells",

abstract = "The p-type Si layer in n-i-p a-Si and μc-Si solar cells on foil has several important requirements with respect to conductivity and optical transmission. We control the optical band gap and activation energy of p-a-SiC by varying the B2H6 and CH4 flows in the process chamber. Modelling shows that the optimum efficiency in n-i-p solar cells is obtained when the p-a-SiC band gap is just above the band gap of the absorber layer. We have assessed the potential of core-loss electron energy-loss spectroscopy (EELS) for detecting B and C and of low-loss EELS, in a spatially resolved manner, as probe of local variations in bulk plasmon energy. EELS in the transmission electron microscope (TEM) combines the necessary spatial resolution to investigate the boundary between p-a-SiC and i-a-Si with sufficient sensitivity to the boron content.",

author = "Van Aken and Martial Duchamp and Chris Boothroyd and Dunin-Borkowski, \{Rafal E.\} and J.-P. Barnes and M. Veillerot and Soppe, \{W. J.\} and H. Ossenbrink and A. Jager-Waldau and P. Helm",

year = "2011",

doi = "10.4229/26thEUPVSEC2011-3AV.2.11",

language = "English",

isbn = "3-936338-27-2",

pages = "2637--2640",

booktitle = "EU PVSEC Proceedings",

note = "26th European Photovoltaic Solar Energy Conference and Exhibition ; Conference date: 05-09-2011 Through 09-09-2011",

url = "http://www.photovoltaic-conference.com/previous-eupvsec/26th-eu-pvsec.html",

}

Aken, V, Duchamp, M, Boothroyd, C, Dunin-Borkowski, RE, Barnes, J-P, Veillerot, M, Soppe, WJ, Ossenbrink, H, Jager-Waldau, A & Helm, P 2011, Boron Concentration Measurements at the I/P Interface in Nip a-Si Solar Cells. in EU PVSEC Proceedings. pp. 2637-2640, 26th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, 05/09/2011. https://doi.org/10.4229/26thEUPVSEC2011-3AV.2.11

TY - GEN

T1 - Boron Concentration Measurements at the I/P Interface in Nip a-Si Solar Cells

AU - Aken, Van

AU - Duchamp, Martial

AU - Boothroyd, Chris

AU - Dunin-Borkowski, Rafal E.

AU - Barnes, J.-P.

AU - Veillerot, M.

AU - Soppe, W. J.

AU - Ossenbrink, H.

AU - Jager-Waldau, A.

AU - Helm, P.

PY - 2011

Y1 - 2011

N2 - The p-type Si layer in n-i-p a-Si and μc-Si solar cells on foil has several important requirements with respect to conductivity and optical transmission. We control the optical band gap and activation energy of p-a-SiC by varying the B2H6 and CH4 flows in the process chamber. Modelling shows that the optimum efficiency in n-i-p solar cells is obtained when the p-a-SiC band gap is just above the band gap of the absorber layer. We have assessed the potential of core-loss electron energy-loss spectroscopy (EELS) for detecting B and C and of low-loss EELS, in a spatially resolved manner, as probe of local variations in bulk plasmon energy. EELS in the transmission electron microscope (TEM) combines the necessary spatial resolution to investigate the boundary between p-a-SiC and i-a-Si with sufficient sensitivity to the boron content.

AB - The p-type Si layer in n-i-p a-Si and μc-Si solar cells on foil has several important requirements with respect to conductivity and optical transmission. We control the optical band gap and activation energy of p-a-SiC by varying the B2H6 and CH4 flows in the process chamber. Modelling shows that the optimum efficiency in n-i-p solar cells is obtained when the p-a-SiC band gap is just above the band gap of the absorber layer. We have assessed the potential of core-loss electron energy-loss spectroscopy (EELS) for detecting B and C and of low-loss EELS, in a spatially resolved manner, as probe of local variations in bulk plasmon energy. EELS in the transmission electron microscope (TEM) combines the necessary spatial resolution to investigate the boundary between p-a-SiC and i-a-Si with sufficient sensitivity to the boron content.

U2 - 10.4229/26thEUPVSEC2011-3AV.2.11

DO - 10.4229/26thEUPVSEC2011-3AV.2.11

M3 - Article in proceedings

SN - 3-936338-27-2

SP - 2637

EP - 2640

BT - EU PVSEC Proceedings

T2 - 26th European Photovoltaic Solar Energy Conference and Exhibition

Y2 - 5 September 2011 through 9 September 2011

ER -

Boron Concentration Measurements at the I/P Interface in Nip a-Si Solar Cells

Abstract

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