The p-type Si layer in n-i-p a-Si and μc-Si solar cells on foil has several important requirements with respect to conductivity and optical transmission. We control the optical band gap and activation energy of p-a-SiC by varying the B2H6 and CH4 flows in the process chamber. Modelling shows that the optimum efficiency in n-i-p solar cells is obtained when the p-a-SiC band gap is just above the band gap of the absorber layer. We have assessed the potential of core-loss electron energy-loss spectroscopy (EELS) for detecting B and C and of low-loss EELS, in a spatially resolved manner, as probe of local variations in bulk plasmon energy. EELS in the transmission electron microscope (TEM) combines the necessary spatial resolution to investigate the boundary between p-a-SiC and i-a-Si with sufficient sensitivity to the boron content.
|Title of host publication||EU PVSEC Proceedings|
|Publication status||Published - 2011|
|Event||26th European Photovoltaic Solar Energy Conference and Exhibition - Congress Center Hamburg, Hamburg, Germany|
Duration: 5 Sep 2011 → 9 Sep 2011
|Conference||26th European Photovoltaic Solar Energy Conference and Exhibition|
|Location||Congress Center Hamburg|
|Period||05/09/2011 → 09/09/2011|