Boron Concentration Measurements at the I/P Interface in Nip a-Si Solar Cells

Van Aken, Martial Duchamp, Chris Boothroyd, Rafal E. Dunin-Borkowski, J.-P. Barnes, M. Veillerot, W. J. Soppe, H. Ossenbrink, A. Jager-Waldau, P. Helm

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    The p-type Si layer in n-i-p a-Si and μc-Si solar cells on foil has several important requirements with respect to conductivity and optical transmission. We control the optical band gap and activation energy of p-a-SiC by varying the B2H6 and CH4 flows in the process chamber. Modelling shows that the optimum efficiency in n-i-p solar cells is obtained when the p-a-SiC band gap is just above the band gap of the absorber layer. We have assessed the potential of core-loss electron energy-loss spectroscopy (EELS) for detecting B and C and of low-loss EELS, in a spatially resolved manner, as probe of local variations in bulk plasmon energy. EELS in the transmission electron microscope (TEM) combines the necessary spatial resolution to investigate the boundary between p-a-SiC and i-a-Si with sufficient sensitivity to the boron content.
    Original languageEnglish
    Title of host publicationEU PVSEC Proceedings
    Publication date2011
    Pages2637-2640
    ISBN (Print)3-936338-27-2
    DOIs
    Publication statusPublished - 2011
    Event26th European Photovoltaic Solar Energy Conference and Exhibition - Congress Center Hamburg, Hamburg, Germany
    Duration: 5 Sep 20119 Sep 2011
    http://www.photovoltaic-conference.com/previous-eupvsec/26th-eu-pvsec.html

    Conference

    Conference26th European Photovoltaic Solar Energy Conference and Exhibition
    LocationCongress Center Hamburg
    CountryGermany
    CityHamburg
    Period05/09/201109/09/2011
    Internet address

    Cite this