Bondwire array modeling for the design of hybrid high power amplifiers above C-band

Carlos Cilla Hernández; Sævar Þór Jónasson; Jesper Hanberg

doi:10.1109/APMC.2012.6421756

Bondwire array modeling for the design of hybrid high power amplifiers above C-band

Carlos Cilla Hernández
, Sævar Þór Jónasson
, Jesper Hanberg

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

This paper presents a bondwire array model obtained using a software based on the finite elements method and validated up to 15 GHz by measurements over a purpose-build array structure. This work addresses the limits of the inductor-based bondwire model when used at frequencies above C-band to simulate the large bondwire arrays that are used in long multi-transistor power bars. The usefulness of an accurate 3D EM model during the amplifier's matching network design process is highlighted using a practical example, and the effect of the insertion loss variations along the different bondwires comprising the array on the hybrid performance is discussed.

Original language	English
Title of host publication	Proceedings of 2012 Asia-Pacific Microwave Conference (APMC)
Publisher	IEEE
Publication date	2012
Pages	851-853
Chapter	4A2-03
ISBN (Print)	978-1-4577-1330-9
ISBN (Electronic)	978-1-4577-1331-6
DOIs	https://doi.org/10.1109/APMC.2012.6421756
Publication status	Published - 2012
Event	2012 Asia-Pacific Microwave Conference (APMC) - Kaohsiung, Taiwan, Province of China Duration: 4 Dec 2012 → 7 Dec 2012

Conference

Conference	2012 Asia-Pacific Microwave Conference (APMC)
Country/Territory	Taiwan, Province of China
City	Kaohsiung
Period	04/12/2012 → 07/12/2012

Keywords

High power amplifier
Hybrid integrated circuits
Integrated circuit packaging
Power transistors
Semiconductor device packaging
Wafer bonding

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10.1109/APMC.2012.6421756

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title = "Bondwire array modeling for the design of hybrid high power amplifiers above C-band",

abstract = "This paper presents a bondwire array model obtained using a software based on the finite elements method and validated up to 15 GHz by measurements over a purpose-build array structure. This work addresses the limits of the inductor-based bondwire model when used at frequencies above C-band to simulate the large bondwire arrays that are used in long multi-transistor power bars. The usefulness of an accurate 3D EM model during the amplifier's matching network design process is highlighted using a practical example, and the effect of the insertion loss variations along the different bondwires comprising the array on the hybrid performance is discussed.",

keywords = "High power amplifier, Hybrid integrated circuits, Integrated circuit packaging, Power transistors, Semiconductor device packaging, Wafer bonding ",

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doi = "10.1109/APMC.2012.6421756",

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N2 - This paper presents a bondwire array model obtained using a software based on the finite elements method and validated up to 15 GHz by measurements over a purpose-build array structure. This work addresses the limits of the inductor-based bondwire model when used at frequencies above C-band to simulate the large bondwire arrays that are used in long multi-transistor power bars. The usefulness of an accurate 3D EM model during the amplifier's matching network design process is highlighted using a practical example, and the effect of the insertion loss variations along the different bondwires comprising the array on the hybrid performance is discussed.

AB - This paper presents a bondwire array model obtained using a software based on the finite elements method and validated up to 15 GHz by measurements over a purpose-build array structure. This work addresses the limits of the inductor-based bondwire model when used at frequencies above C-band to simulate the large bondwire arrays that are used in long multi-transistor power bars. The usefulness of an accurate 3D EM model during the amplifier's matching network design process is highlighted using a practical example, and the effect of the insertion loss variations along the different bondwires comprising the array on the hybrid performance is discussed.

KW - High power amplifier

KW - Hybrid integrated circuits

KW - Integrated circuit packaging

KW - Power transistors

KW - Semiconductor device packaging

KW - Wafer bonding

U2 - 10.1109/APMC.2012.6421756

DO - 10.1109/APMC.2012.6421756

M3 - Article in proceedings

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BT - Proceedings of 2012 Asia-Pacific Microwave Conference (APMC)

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T2 - 2012 Asia-Pacific Microwave Conference (APMC)

Y2 - 4 December 2012 through 7 December 2012

ER -

Bondwire array modeling for the design of hybrid high power amplifiers above C-band

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