Bombardment-induced modification of GaAS/AlGaAs heterostructures

Rafael J. Taboryski, Poul Erik Lindelof, E. Veje

Research output: Contribution to journalConference articleResearchpeer-review


We have irradiated some GaAs/AlGaAs heterostructures with 80 keV He+ ions and studied bombardment-induced changes of the electrical resistivity and the carrier density of a two-dimensional electron layer located at the intersection between a GaAs buffer and an AlGaAs spacer. The whole structure was so thin that the projectiles passed through the two-dimensional electron layer and stopped in the supporting substrate. The resistivity and the carrier density of the samples were determined at temperatures between 1.2 and 4.2. K before and after the bombardments, which were carried out at room temperature. The carrier density was determined from Shubnikov-De Haas oscillations. An interesting result is that the resistivity depends strongly on the projectile fluence, in contrast to the carrier density. As an example, a fluence of 3 × 109 He+ions/cm2 doubles the resistance but reduces the carr density by 5% only.

Original languageEnglish
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Issue number1-4
Pages (from-to)482-484
Publication statusPublished - 1990
Externally publishedYes
Event13th International Conference on Atomic Collisions in Solids - Århus, Denmark
Duration: 7 Aug 198911 Aug 1989
Conference number: 13


Conference13th International Conference on Atomic Collisions in Solids


Dive into the research topics of 'Bombardment-induced modification of GaAS/AlGaAs heterostructures'. Together they form a unique fingerprint.

Cite this