Block copolymer lithography: Feature size control and extension by an over-etch technique

Sozaraj Rasappa; Dipu  Borah; Ramsankar  Senthamaraikannan; Colm C.  Faulkner; Matthew T.  Shaw; Peter  Gleeson; Justin D.  Holmes; Michael A.  Morris

doi:10.1016/j.tsf.2012.09.017

Block copolymer lithography: Feature size control and extension by an over-etch technique

Sozaraj Rasappa, Dipu Borah, Ramsankar Senthamaraikannan, Colm C. Faulkner, Matthew T. Shaw, Peter Gleeson, Justin D. Holmes, Michael A. Morris

Research output: Contribution to journal › Conference article › peer-review

Abstract

Block copolymer lithography based on block copolymer (BCP) self-assembly can be used to develop soft mask nanoscale templates for subsequent pattern transfer to generate substrate features. Self-assembly of lamellar polystyrene-b-polymethylmethacrylate BCP of varying molecular weights to generate silicon nanoscale features is reported here. It has also been demonstrated that the feature size can be controlled by a plasma over-etch process and discussed.
© 2012 Elsevier B.V. All rights reserved.

Original language	English
Journal	Thin Solid Films
Volume	522
Pages (from-to)	318–323
ISSN	0040-6090
DOIs	https://doi.org/10.1016/j.tsf.2012.09.017
Publication status	Published - 2012
Externally published	Yes
Event	EMRS 2011 Symposium Q - Nice, France Duration: 9 May 2011 → 13 May 2011

Conference

Conference	EMRS 2011 Symposium Q
Country/Territory	France
City	Nice
Period	09/05/2011 → 13/05/2011

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10.1016/j.tsf.2012.09.017

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@inproceedings{77dc7289ed0c4fce9dc7576498cab551,

title = "Block copolymer lithography: Feature size control and extension by an over-etch technique",

abstract = "Block copolymer lithography based on block copolymer (BCP) self-assembly can be used to develop soft mask nanoscale templates for subsequent pattern transfer to generate substrate features. Self-assembly of lamellar polystyrene-b-polymethylmethacrylate BCP of varying molecular weights to generate silicon nanoscale features is reported here. It has also been demonstrated that the feature size can be controlled by a plasma over-etch process and discussed.{\textcopyright} 2012 Elsevier B.V. All rights reserved.",

author = "Sozaraj Rasappa and Dipu Borah and Ramsankar Senthamaraikannan and Faulkner, {Colm C.} and Shaw, {Matthew T.} and Peter Gleeson and Holmes, {Justin D.} and Morris, {Michael A.}",

year = "2012",

doi = "10.1016/j.tsf.2012.09.017",

language = "English",

volume = "522",

pages = "318–323",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

note = "EMRS 2011 Symposium Q ; Conference date: 09-05-2011 Through 13-05-2011",

}

Block copolymer lithography: Feature size control and extension by an over-etch technique. / Rasappa, Sozaraj; Borah, Dipu ; Senthamaraikannan, Ramsankar ; Faulkner, Colm C. ; Shaw, Matthew T. ; Gleeson, Peter ; Holmes, Justin D. ; Morris, Michael A. .

In: Thin Solid Films, Vol. 522, 2012, p. 318–323.

Research output: Contribution to journal › Conference article › peer-review

TY - GEN

T1 - Block copolymer lithography: Feature size control and extension by an over-etch technique

AU - Rasappa, Sozaraj

AU - Borah, Dipu

AU - Senthamaraikannan, Ramsankar

AU - Faulkner, Colm C.

AU - Shaw, Matthew T.

AU - Gleeson, Peter

AU - Holmes, Justin D.

AU - Morris, Michael A.

PY - 2012

Y1 - 2012

N2 - Block copolymer lithography based on block copolymer (BCP) self-assembly can be used to develop soft mask nanoscale templates for subsequent pattern transfer to generate substrate features. Self-assembly of lamellar polystyrene-b-polymethylmethacrylate BCP of varying molecular weights to generate silicon nanoscale features is reported here. It has also been demonstrated that the feature size can be controlled by a plasma over-etch process and discussed.© 2012 Elsevier B.V. All rights reserved.

AB - Block copolymer lithography based on block copolymer (BCP) self-assembly can be used to develop soft mask nanoscale templates for subsequent pattern transfer to generate substrate features. Self-assembly of lamellar polystyrene-b-polymethylmethacrylate BCP of varying molecular weights to generate silicon nanoscale features is reported here. It has also been demonstrated that the feature size can be controlled by a plasma over-etch process and discussed.© 2012 Elsevier B.V. All rights reserved.

U2 - 10.1016/j.tsf.2012.09.017

DO - 10.1016/j.tsf.2012.09.017

M3 - Conference article

VL - 522

SP - 318

EP - 323

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

T2 - EMRS 2011 Symposium Q

Y2 - 9 May 2011 through 13 May 2011

ER -

Block copolymer lithography: Feature size control and extension by an over-etch technique

Abstract

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