Black Silicon With Ultra-Low Surface Recombination Velocity Fabricated by Inductively Coupled Power Plasma

Engineering

• Si Surface 100%
• Surface Recombination Velocity 100%
• Solar Cell 100%
• Reactive Ion Etch 66%
• Damage Surface 66%
• Step Process 33%
• Material Loss 33%
• Texturing 33%
• Reflectance 33%
• Etching Process 33%
• Reference Surface 33%
• Silicon Surface 33%
• Crystallinity 33%
• Open Circuit Voltage 33%
• Atomic Layer Deposition 33%

Material Science

• Silicon 100%
• Solar Cell 100%
• Surface Damage 66%
• Al2O3 33%
• Electrical Resistivity 33%
• Electronic Circuit 33%

Keyphrases

• Base Resistivity 33%
• Czochralski 33%