Black silicon with tunnel oxide passivated contacts

Maren E. Kloster, Maria-Louise Witthøft, Denver C. Shearer, Alireza Hajijafarassar, Rasmus S. Davidsen, Dirch H. Petersen, Ole Hansen, Beniamino Iandolo

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    108 Downloads (Pure)

    Abstract

    We investigate surfaces of black silicon (bSi) fabricated by reactive ion etch (RIE) on n-type Si substrates and passivated by in-situ doped polycrystalline Si (poly-Si) deposited by low pressure chemical vapor deposition (LPCVD). We achieved full surface coverage of bSi surfaces for poly-Si thickness of 20 nm. We determined sheet resistance on p-type and n-type poly-Si by means of micro four-point probe measurements. Effective lifetime mapping on symmetrically passivated samples shows that n-type poly-Si offers excellent surface passivation after hydrogenation, reaching effective lifetime values of almost 4 ms on non-textured substrates. P-type poly-Si shows values of effective lifetime lower than 800 μs and requires further improvement. We calculated i-Voc of up to 711 mV and 609 mV for asymmetrically passivated lifetime samples without texturing and with bSi, respectively. The effective lifetime is limited by the less-than-optimal passivation of the p-type poly-Si. Preliminary solar cell measurements indicate that both cell voltage and fill factor require major improvement on textured surfaces. Current work is directed towards the following goals: improving the quality of the p-type poly-Si; testing possible replacement of wet chemistry to grow the tunnel oxide using dry furnace oxidation; fabricating and comparing cells with p-n junction at the front or at the bottom of the cell.
    Original languageEnglish
    Title of host publicationProceedings of the 35th European Photovoltaic Solar Energy Conference and Exhibition
    Publication date2018
    Pages668-671
    ISBN (Electronic)3-936338-50-7
    DOIs
    Publication statusPublished - 2018
    Event35th European Photovoltaic Solar Energy Conference and Exhibition - Brussels, Belgium
    Duration: 24 Sep 201828 Sep 2018

    Conference

    Conference35th European Photovoltaic Solar Energy Conference and Exhibition
    CountryBelgium
    CityBrussels
    Period24/09/201828/09/2018

    Cite this

    Kloster, M. E., Witthøft, M-L., Shearer, D. C., Hajijafarassar, A., Davidsen, R. S., Petersen, D. H., ... Iandolo, B. (2018). Black silicon with tunnel oxide passivated contacts. In Proceedings of the 35th European Photovoltaic Solar Energy Conference and Exhibition (pp. 668-671) https://doi.org/10.4229/35thEUPVSEC20182018-2AV.3.19
    Kloster, Maren E. ; Witthøft, Maria-Louise ; Shearer, Denver C. ; Hajijafarassar, Alireza ; Davidsen, Rasmus S. ; Petersen, Dirch H. ; Hansen, Ole ; Iandolo, Beniamino. / Black silicon with tunnel oxide passivated contacts. Proceedings of the 35th European Photovoltaic Solar Energy Conference and Exhibition. 2018. pp. 668-671
    @inproceedings{1a9c9d3c600d4118aa26fb4ac262332b,
    title = "Black silicon with tunnel oxide passivated contacts",
    abstract = "We investigate surfaces of black silicon (bSi) fabricated by reactive ion etch (RIE) on n-type Si substrates and passivated by in-situ doped polycrystalline Si (poly-Si) deposited by low pressure chemical vapor deposition (LPCVD). We achieved full surface coverage of bSi surfaces for poly-Si thickness of 20 nm. We determined sheet resistance on p-type and n-type poly-Si by means of micro four-point probe measurements. Effective lifetime mapping on symmetrically passivated samples shows that n-type poly-Si offers excellent surface passivation after hydrogenation, reaching effective lifetime values of almost 4 ms on non-textured substrates. P-type poly-Si shows values of effective lifetime lower than 800 μs and requires further improvement. We calculated i-Voc of up to 711 mV and 609 mV for asymmetrically passivated lifetime samples without texturing and with bSi, respectively. The effective lifetime is limited by the less-than-optimal passivation of the p-type poly-Si. Preliminary solar cell measurements indicate that both cell voltage and fill factor require major improvement on textured surfaces. Current work is directed towards the following goals: improving the quality of the p-type poly-Si; testing possible replacement of wet chemistry to grow the tunnel oxide using dry furnace oxidation; fabricating and comparing cells with p-n junction at the front or at the bottom of the cell.",
    author = "Kloster, {Maren E.} and Maria-Louise Witth{\o}ft and Shearer, {Denver C.} and Alireza Hajijafarassar and Davidsen, {Rasmus S.} and Petersen, {Dirch H.} and Ole Hansen and Beniamino Iandolo",
    year = "2018",
    doi = "10.4229/35thEUPVSEC20182018-2AV.3.19",
    language = "English",
    pages = "668--671",
    booktitle = "Proceedings of the 35th European Photovoltaic Solar Energy Conference and Exhibition",

    }

    Kloster, ME, Witthøft, M-L, Shearer, DC, Hajijafarassar, A, Davidsen, RS, Petersen, DH, Hansen, O & Iandolo, B 2018, Black silicon with tunnel oxide passivated contacts. in Proceedings of the 35th European Photovoltaic Solar Energy Conference and Exhibition. pp. 668-671, 35th European Photovoltaic Solar Energy Conference and Exhibition, Brussels, Belgium, 24/09/2018. https://doi.org/10.4229/35thEUPVSEC20182018-2AV.3.19

    Black silicon with tunnel oxide passivated contacts. / Kloster, Maren E. ; Witthøft, Maria-Louise; Shearer, Denver C. ; Hajijafarassar, Alireza; Davidsen, Rasmus S.; Petersen, Dirch H.; Hansen, Ole; Iandolo, Beniamino.

    Proceedings of the 35th European Photovoltaic Solar Energy Conference and Exhibition. 2018. p. 668-671.

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    TY - GEN

    T1 - Black silicon with tunnel oxide passivated contacts

    AU - Kloster, Maren E.

    AU - Witthøft, Maria-Louise

    AU - Shearer, Denver C.

    AU - Hajijafarassar, Alireza

    AU - Davidsen, Rasmus S.

    AU - Petersen, Dirch H.

    AU - Hansen, Ole

    AU - Iandolo, Beniamino

    PY - 2018

    Y1 - 2018

    N2 - We investigate surfaces of black silicon (bSi) fabricated by reactive ion etch (RIE) on n-type Si substrates and passivated by in-situ doped polycrystalline Si (poly-Si) deposited by low pressure chemical vapor deposition (LPCVD). We achieved full surface coverage of bSi surfaces for poly-Si thickness of 20 nm. We determined sheet resistance on p-type and n-type poly-Si by means of micro four-point probe measurements. Effective lifetime mapping on symmetrically passivated samples shows that n-type poly-Si offers excellent surface passivation after hydrogenation, reaching effective lifetime values of almost 4 ms on non-textured substrates. P-type poly-Si shows values of effective lifetime lower than 800 μs and requires further improvement. We calculated i-Voc of up to 711 mV and 609 mV for asymmetrically passivated lifetime samples without texturing and with bSi, respectively. The effective lifetime is limited by the less-than-optimal passivation of the p-type poly-Si. Preliminary solar cell measurements indicate that both cell voltage and fill factor require major improvement on textured surfaces. Current work is directed towards the following goals: improving the quality of the p-type poly-Si; testing possible replacement of wet chemistry to grow the tunnel oxide using dry furnace oxidation; fabricating and comparing cells with p-n junction at the front or at the bottom of the cell.

    AB - We investigate surfaces of black silicon (bSi) fabricated by reactive ion etch (RIE) on n-type Si substrates and passivated by in-situ doped polycrystalline Si (poly-Si) deposited by low pressure chemical vapor deposition (LPCVD). We achieved full surface coverage of bSi surfaces for poly-Si thickness of 20 nm. We determined sheet resistance on p-type and n-type poly-Si by means of micro four-point probe measurements. Effective lifetime mapping on symmetrically passivated samples shows that n-type poly-Si offers excellent surface passivation after hydrogenation, reaching effective lifetime values of almost 4 ms on non-textured substrates. P-type poly-Si shows values of effective lifetime lower than 800 μs and requires further improvement. We calculated i-Voc of up to 711 mV and 609 mV for asymmetrically passivated lifetime samples without texturing and with bSi, respectively. The effective lifetime is limited by the less-than-optimal passivation of the p-type poly-Si. Preliminary solar cell measurements indicate that both cell voltage and fill factor require major improvement on textured surfaces. Current work is directed towards the following goals: improving the quality of the p-type poly-Si; testing possible replacement of wet chemistry to grow the tunnel oxide using dry furnace oxidation; fabricating and comparing cells with p-n junction at the front or at the bottom of the cell.

    U2 - 10.4229/35thEUPVSEC20182018-2AV.3.19

    DO - 10.4229/35thEUPVSEC20182018-2AV.3.19

    M3 - Article in proceedings

    SP - 668

    EP - 671

    BT - Proceedings of the 35th European Photovoltaic Solar Energy Conference and Exhibition

    ER -

    Kloster ME, Witthøft M-L, Shearer DC, Hajijafarassar A, Davidsen RS, Petersen DH et al. Black silicon with tunnel oxide passivated contacts. In Proceedings of the 35th European Photovoltaic Solar Energy Conference and Exhibition. 2018. p. 668-671 https://doi.org/10.4229/35thEUPVSEC20182018-2AV.3.19