Black Silicon realized by reactive ion etching (ICP) without platen power

Rasmus Schmidt Davidsen, Adriana P. Sánchez Nery, Beniamino Iandolo, Ole Hansen

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    Reflectance and minority carrier lifetime were measured for black silicon textured by different inductively coupled plasma (ICP) reactive ion etching processes without any capacitively coupled power (platen power). Reflectance was reduced to below 5% after 2 minutes and below 4% after 3 minutes etch time, with several accessible routes to lower reflectance identified. Black silicon wafers were passivated by atomic-layer deposited (ALD) Al2O3 and minority carrier lifetime was measured to 2.1 ms for 2 minutes texturing, while minority carrier lifetimes were well below 1.0 ms for etch times in the 5-20 min range. Samples measured immediately after ALD activation, show minority carrier lifetime above 3 ms for RIE process time between 1.5 and 3 min and between 2.5 and 3 ms for etching times above 3 min. These results indicate that ultra-low reflectance and minority carrier lifetime on par with those of the best passivated solar cells to date may be achieved after texturing for just 2 min.
    Original languageEnglish
    Title of host publication 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
    Number of pages4
    Publication date2018
    ISBN (Electronic)978-1-5386-8529-7
    Publication statusPublished - 2018
    Event7th World Conference on Photovoltaic Energy Conversion - Hilton Waikoloa Village Resort, Waikoloa, United States
    Duration: 10 Jun 201815 Jun 2018
    Conference number: WCPEC-7


    Conference7th World Conference on Photovoltaic Energy Conversion
    LocationHilton Waikoloa Village Resort
    Country/TerritoryUnited States


    • Black silicon
    • Minority carrier lifetime nanostructures
    • Reactive ion etching
    • Reflectance


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