Black silicon laser-doped selective emitter solar cell with 18.1% efficiency

Rasmus Schmidt Davidsen, Hongzhao Li, Alexander To, Xi Wang, Alex Han, Jack An, Jack Colwell, Catherine Chan, Alison Wenham, Michael Stenbæk Schmidt, Anja Boisen, Ole Hansen, Stuart Wenham, Allen Barnett

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    Abstract

    We report fabrication of nanostructured, laser-doped selective emitter (LDSE) silicon solar cells with power conversion efficiency of 18.1% and a fill factor (FF) of 80.1%. The nanostructured solar cells were realized through a single step, mask-less, scalable reactive ion etch (RIE) texturing of the surface. The selective emitter was formed by means of laser doping using a continuous wave (CW) laser and subsequent contact formation using light-induced plating of Ni and Cu. The combination of RIE-texturing and a LDSE cell design has to our knowledge not been demonstrated previously. The resulting efficiency indicates a promising potential, especially considering that the cell reported in this work is the first proof-of-concept and that the fabricated cell is not fully optimized in terms of plating, emitter sheet resistance and surface passivation. Due to the scalable nature and simplicity of RIE-texturing as well as the LDSE process, we consider this specific combination a promising candidate for a cost-efficient process for future Si solar cells.
    Original languageEnglish
    JournalSolar Energy Materials & Solar Cells
    Volume144
    Pages (from-to)740-747
    ISSN0927-0248
    DOIs
    Publication statusPublished - 2016

    Keywords

    • Black silicon
    • Reactive ion etching
    • Laser doping
    • LDSE
    • Plating

    Cite this

    Davidsen, R. S., Li, H., To, A., Wang, X., Han, A., An, J., Colwell, J., Chan, C., Wenham, A., Schmidt, M. S., Boisen, A., Hansen, O., Wenham, S., & Barnett, A. (2016). Black silicon laser-doped selective emitter solar cell with 18.1% efficiency. Solar Energy Materials & Solar Cells, 144, 740-747. https://doi.org/10.1016/j.solmat.2015.10.018