Bismuth-induced restructuring of the GaSb(110) surface

T. van Gemmeren; L. Lottermoser; G. Falkenberg; L. Seehofer; R.L. Johnson; L. Gavioli; C. Mariani; R. Feidenhans'l; E. Landemark; D. Smilgies; M. Nielsen

doi:10.1103/PhysRevB.57.3749

Bismuth-induced restructuring of the GaSb(110) surface

T. van Gemmeren, L. Lottermoser, G. Falkenberg, L. Seehofer, R.L. Johnson, L. Gavioli, C. Mariani, R. Feidenhans'l, E. Landemark, D. Smilgies, M. Nielsen

Research output: Contribution to journal › Journal article › Research

Abstract

The structure of the GaSb(110)(1 x 2)-Bi reconstruction has been solved using surface x-ray diffraction, scanning tunneling microscopy, and photoelectron spectroscopy. The ideal GaSb(110) surface is terminated with zigzag chains of anions and cations running in the [1 (1) over bar 0] direction. In the Bi-induced (1 X 2) reconstruction we find that every second zigzag chain in the uppermost substrate layer is missing. The reconstructed surface is terminated with a full monolayer of Bi atoms which also form zigzag chains. The Bi atoms in the chains bond alternately to the first and second layer substrate atoms and the Bi chains are inclined at 34 degrees to the (110) plane. [S0163-1829(97)03335-3].

Original language	English
Journal	Physical Review B
Volume	57
Issue number	7
Pages (from-to)	3749-3752
ISSN	2469-9950
DOIs	https://doi.org/10.1103/PhysRevB.57.3749
Publication status	Published - 1998

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title = "Bismuth-induced restructuring of the GaSb(110) surface",

abstract = "The structure of the GaSb(110)(1 x 2)-Bi reconstruction has been solved using surface x-ray diffraction, scanning tunneling microscopy, and photoelectron spectroscopy. The ideal GaSb(110) surface is terminated with zigzag chains of anions and cations running in the [1 (1) over bar 0] direction. In the Bi-induced (1 X 2) reconstruction we find that every second zigzag chain in the uppermost substrate layer is missing. The reconstructed surface is terminated with a full monolayer of Bi atoms which also form zigzag chains. The Bi atoms in the chains bond alternately to the first and second layer substrate atoms and the Bi chains are inclined at 34 degrees to the (110) plane. [S0163-1829(97)03335-3].",

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doi = "10.1103/PhysRevB.57.3749",

language = "English",

volume = "57",

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TY - JOUR

T1 - Bismuth-induced restructuring of the GaSb(110) surface

AU - Gemmeren, T. van

AU - Lottermoser, L.

AU - Falkenberg, G.

AU - Seehofer, L.

AU - Johnson, R.L.

AU - Gavioli, L.

AU - Mariani, C.

AU - Feidenhans'l, R.

AU - Landemark, E.

AU - Smilgies, D.

AU - Nielsen, M.

PY - 1998

Y1 - 1998

N2 - The structure of the GaSb(110)(1 x 2)-Bi reconstruction has been solved using surface x-ray diffraction, scanning tunneling microscopy, and photoelectron spectroscopy. The ideal GaSb(110) surface is terminated with zigzag chains of anions and cations running in the [1 (1) over bar 0] direction. In the Bi-induced (1 X 2) reconstruction we find that every second zigzag chain in the uppermost substrate layer is missing. The reconstructed surface is terminated with a full monolayer of Bi atoms which also form zigzag chains. The Bi atoms in the chains bond alternately to the first and second layer substrate atoms and the Bi chains are inclined at 34 degrees to the (110) plane. [S0163-1829(97)03335-3].

AB - The structure of the GaSb(110)(1 x 2)-Bi reconstruction has been solved using surface x-ray diffraction, scanning tunneling microscopy, and photoelectron spectroscopy. The ideal GaSb(110) surface is terminated with zigzag chains of anions and cations running in the [1 (1) over bar 0] direction. In the Bi-induced (1 X 2) reconstruction we find that every second zigzag chain in the uppermost substrate layer is missing. The reconstructed surface is terminated with a full monolayer of Bi atoms which also form zigzag chains. The Bi atoms in the chains bond alternately to the first and second layer substrate atoms and the Bi chains are inclined at 34 degrees to the (110) plane. [S0163-1829(97)03335-3].

KW - Nye funktionelle materialer

U2 - 10.1103/PhysRevB.57.3749

DO - 10.1103/PhysRevB.57.3749

M3 - Journal article

VL - 57

SP - 3749

EP - 3752

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 7

ER -

Bismuth-induced restructuring of the GaSb(110) surface

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