Bismuth-induced restructuring of the GaSb(110) surface

T. van Gemmeren, L. Lottermoser, G. Falkenberg, L. Seehofer, R.L. Johnson, L. Gavioli, C. Mariani, R. Feidenhans'l, E. Landemark, D. Smilgies, M. Nielsen

    Research output: Contribution to journalJournal articleResearch

    Abstract

    The structure of the GaSb(110)(1 x 2)-Bi reconstruction has been solved using surface x-ray diffraction, scanning tunneling microscopy, and photoelectron spectroscopy. The ideal GaSb(110) surface is terminated with zigzag chains of anions and cations running in the [1 (1) over bar 0] direction. In the Bi-induced (1 X 2) reconstruction we find that every second zigzag chain in the uppermost substrate layer is missing. The reconstructed surface is terminated with a full monolayer of Bi atoms which also form zigzag chains. The Bi atoms in the chains bond alternately to the first and second layer substrate atoms and the Bi chains are inclined at 34 degrees to the (110) plane. [S0163-1829(97)03335-3].
    Original languageEnglish
    JournalPhysical Review B
    Volume57
    Issue number7
    Pages (from-to)3749-3752
    ISSN2469-9950
    DOIs
    Publication statusPublished - 1998

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