Binding of Quasi-Two-Dimensional Biexcitons

Dan Birkedal, Jai Singh, Lyssenko Vadim, John Erland Østergaard, Jørn Märcher Hvam

    Research output: Contribution to journalJournal articleResearchpeer-review

    241 Downloads (Pure)

    Abstract

    Biexciton binding in GaAs quantum wells has been investigated for a range of well thicknesses (80-160 Angstrom) with spectrally resolved photoluminescence and transient degenerate four-wave mixing. Both light and heavy hole biexcitons are observed. The ratio of the binding energy of the heavy hole biexciton to that of the heavy hole exciton is found to be approximate to 0.2, and nearly independent of well width over the investigated range. A new theoretical calculation agrees very well with the experimental ratio. This ratio is larger than predicted by Hayne's rule for three-dimensional biexcitons.
    Original languageEnglish
    JournalPhysical Review Letters
    Volume76
    Issue number4
    Pages (from-to)672-675
    ISSN0031-9007
    DOIs
    Publication statusPublished - 1996

    Bibliographical note

    Copyright (1996) American Physical Society.

    Fingerprint Dive into the research topics of 'Binding of Quasi-Two-Dimensional Biexcitons'. Together they form a unique fingerprint.

    Cite this