Binding of biexcitons in GaAs/AlxGa1-xAs superlattices

Vygantas Mizeikis, Dan Birkedal, Wolfgang Werner Langbein, Lyssenko Vadim, Jørn Märcher Hvam

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    Abstract

    Properties of the heavy-hole excitons and biexcitons in GaAs/Al0.3Ga0.7As superlattices are studied using linear and nonlinear optical techniques. In superlattices with miniband halfwidths less than the exciton binding energy, the biexciton binding energy is found to be the same as in the noninteracting multiple quantum wells of the same width. When the miniband halfwidth exceeds the exciton binding energy, the biexciton binding energy decreases abruptly to the bulk value.
    Original languageEnglish
    JournalPhysical Review B
    Volume55
    Issue number8
    Pages (from-to)5284-5289
    ISSN2469-9950
    DOIs
    Publication statusPublished - 1997

    Bibliographical note

    Copyright (1997) American Physical Society.

    Keywords

    • GENERATION
    • ENERGY
    • QUANTUM-WELLS
    • SEMICONDUCTOR SUPERLATTICES
    • TWO-DIMENSIONAL EXCITONS

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